LiTFSI‐Free Spiro‐OMeTAD‐Based Perovskite Solar Cells with Power Conversion Efficiencies Exceeding 19%

To date, the most efficient perovskite solar cells (PSCs) employ an n–i–p device architecture that uses a 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) hole‐transporting material (HTM), which achieves optimum conductivity with the addition of lithium bis(trifluoromethane)sulfonimide (LiTFSI) and air exposure. However, this additive along with its oxidation process leads to poor reproducibility and is detrimental to stability. Herein, a dicationic salt spiro‐OMeTAD(TFSI)₂, is employed as an effective p‐dopant to achieve power conversion efficiencies of 19.3% and 18.3% (apertures of 0.16 and 1.00 cm²) with excellent reproducibility in the absence of LiTFSI and air exposure. As far as it is known, these are the highest‐performing n–i–p PSCs without LiTFSI or air exposure. Comprehensive analysis demonstrates that precise control of the proportion of [spiro‐OMeTAD]⁺ directly provides high conductivity in HTM films with low series resistance, fast hole extraction, and lower interfacial charge recombination. Moreover, the spiro‐OMeTAD(TFSI)₂‐doped devices show improved stability, benefitting from well‐retained HTM morphology without forming aggregates or voids when tested under an ambient atmosphere. A facile approach is presented to fabricate highly efficient PSCs by replacing LiTFSI with spiro‐OMeTAD(TFSI)₂. Furthermore, this study provides an insight into the relationship between device performance and the HTM doping level.     

Molecular Engineering Using an Anthanthrone Dye for Low‐Cost Hole Transport Materials: A Strategy for Dopant‐Free,High‐Efficiency,and Stable Perovskite Solar Cells

In this report, highly efficient and humidity‐resistant perovskite solar cells (PSCs) using two new small molecule hole transporting materials (HTM) made from a cost‐effective precursor anthanthrone (ANT) dye, namely, 4,10‐bis(1,2‐dihydroacenaphthylen‐5‐yl)‐6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene (ACE‐ANT‐ACE) and 4,4′‐(6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene‐4,10‐diyl)bis(N,N‐bis(4‐methoxyphenyl)aniline) (TPA‐ANT‐TPA) are presented. The newly developed HTMs are systematically compared with the conventional 2,2′,7,7′‐tetrakis(N,N′‐di‐p‐methoxyphenylamino)‐9,9′‐spirbiuorene (Spiro‐OMeTAD). ACE‐ANT‐ACE and TPA‐ANT‐TPA are used as a dopant‐free HTM in mesoscopic TiO₂/CH₃NH₃PbI₃/HTM solid‐state PSCs, and the performance as well as stability are compared with Spiro‐OMeTAD‐based PSCs. After extensive optimization of the metal oxide scaffold and device processing conditions, dopant‐free novel TPA‐ANT‐TPA HTM‐based PSC devices achieve a maximum power conversion efficiency (PCE) of 17.5% with negligible hysteresis. An impressive current of 21 mA cm^?2 is also confirmed from photocurrent density with a higher fill factor of 0.79. The obtained PCE of 17.5% utilizing TPA‐ANT‐TPA is higher performance than the devices prepared using doped Spiro‐OMeTAD (16.8%) as hole transport layer at 1 sun condition. It is found that doping of LiTFSI salt increases hygroscopic characteristics in Spiro‐OMeTAD; this leads to the fast degradation of solar cells. While, solar cells prepared using undoped TPA‐ANT‐TPA show dewetting and improved stability. Additionally, the new HTMs form a fully homogeneous and completely covering thin film on the surface of the active light absorbing perovskite layers that acts as a protective coating for underlying perovskite films. This breakthrough paves the way for development of new inexpensive, more stable, and highly efficient ANT core based lower cost HTMs for cost‐effective, conventional, and printable PSCs.     

High‐Performance and Stable Perovskite Solar Cells Based on Dopant‐Free Arylamine‐Substituted Copper(II) Phthalocyanine Hole‐Transporting Materials

A power conversion efficiency (PCE) as high as 19.7% is achieved using a novel, low‐cost, dopant‐free hole transport material (HTM) in mixed‐ion solution‐processed perovskite solar cells (PSCs). Following a rational molecular design strategy, arylamine‐substituted copper(II) phthalocyanine (CuPc) derivatives are selected as HTMs, reaching the highest PCE ever reported for PSCs employing dopant‐free HTMs. The intrinsic thermal and chemical properties of dopant‐free CuPcs result in PSCs with a long‐term stability outperforming that of the benchmark doped 2,2′,7,7′‐Tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐Spirobifluorene (Spiro‐OMeTAD)‐based devices. The combination of molecular modeling, synthesis, and full experimental characterization sheds light on the nanostructure and molecular aggregation of arylamine‐substituted CuPc compounds, providing a link between molecular structure and device properties. These results reveal the potential of engineering CuPc derivatives as dopant‐free HTMs to fabricate cost‐effective and highly efficient PSCs with long‐term stability, and pave the way to their commercial‐scale manufacturing. More generally, this case demonstrates how an integrated approach based on rational design and computational modeling can guide and anticipate the synthesis of new classes of materials to achieve specific functions in complex device structures.     

Low‐Cost N,N′‐Bicarbazole‐Based Dopant‐Free Hole‐Transporting Materials for Large‐Area Perovskite Solar Cells

Despite the recent unprecedented development of efficient dopant‐free hole transporting materials (HTMs) for high‐performance perovskite solar cells (PSCs) on small‐area devices (≤0.1 cm²), low‐cost dopant‐free HTMs for large‐area PSCs (≥1 cm²) with high power conversion efficiencies (PCEs) have rarely been reported. Herein, two novel HTMs, 3,3′,6,6′ (or 2,2′,7,7′)‐tetrakis(N,N′‐di‐p‐methoxyphenylamine)‐N,N′‐bicarbazole (3,6 BCz‐OMeTAD or 2,7 BCz‐OMeTAD), are synthesized via an extremely simple route from very cheap raw materials. Owing to their excellent film‐forming abilities and matching energy levels, 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD can be successfully employed as a perfect ultrathin (≈30 nm) hole transporting layer in large‐area PSCs up to 1 cm². The 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD based large‐area PSCs show highest PCEs up to 17.0% and 17.6%, respectively. More importantly, high performance large‐area PSCs based on 2,7 BCz‐OMeTAD retain 90% of the initial efficiency after 2000 h storage in an ambient environment without encapsulation.     

Copper Salts Doped Spiro‐OMeTAD for High‐Performance Perovskite Solar Cells

The development of effective and stable hole transporting materials (HTMs) is very important for achieving high‐performance planar perovskite solar cells (PSCs). Herein, copper salts (cuprous thiocyanate (CuSCN) or cuprous iodide (CuI)) doped 2,2,7,7‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9‐spirobifluorene (spiro‐OMeTAD) based on a solution processing as the HTM in PSCs is demonstrated. The incorporation of CuSCN (or CuI) realizes a p‐type doping with efficient charge transfer complex, which results in improved film conductivity and hole mobility in spiro‐OMeTAD:CuSCN (or CuI) composite films. As a result, the PCE is largely improved from 14.82% to 18.02% due to obvious enhancements in the cell parameters of short‐circuit current density and fill factor. Besides the HTM role, the composite film can suppress the film aggregation and crystallization of spiro‐OMeTAD films with reduced pinholes and voids, which slows down the perovskite decomposition by avoiding the moisture infiltration to some extent. The finding in this work provides a simple method to improve the efficiency and stability of planar perovskite solar cells.     

Solution Processable Inorganic–Organic Double‐Layered Hole Transport Layer for Highly Stable Planar Perovskite Solar Cells

Perovskite solar cells (PSCs) have reached their highest efficiency with 2,2′,7,7′‐tetrakis(N,N′‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD). However, this material can cause problems with respect to reproducibility and stability. Herein, a solution‐processable inorganic–organic double layer based on tungsten oxide (WO₃) and spiro‐OMeTAD is reported as a hole transport layer in PSCs. The device equipped with a WO₃/spiro‐OMeTAD layer achieves the highest efficiency (21.44%) in the tin (IV) oxide planar structure. The electronic properties of the double layer are thoroughly analyzed using photoluminescence, space‐charge–limited current, and electrochemical impedance spectroscopy. The WO₃/spiro‐OMeTAD layer exhibits better hole extraction ability and faster hole mobility. The WO₃ layer particularly improves the open‐circuit voltage (V_OC) by lowering the quasi‐Fermi energy level for holes and reducing charge recombination, resulting in high V_OC (1.17 V in the champion cell). In addition, the WO₃ layer as a scaffold layer promotes the formation of a uniform and pinhole‐free spiro‐OMeTAD overlayer in the WO₃/spiro‐OMeTAD layer. High stability under thermal and humid conditions stems from this property. The study presents a facile approach for improving the efficiency and stability of PSCs by stacking an organic layer on an inorganic layer.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.     

Molecular Engineering of Copper Phthalocyanines: A Strategy in Developing Dopant‐Free Hole‐Transporting Materials for Efficient and Ambient‐Stable Perovskite Solar Cells

Copper (II) phthalocyanines (CuPcs) have attracted growing interest as promising hole‐transporting materials (HTMs) in perovskite solar cells (PSCs) due to their low‐cost and excellent stability. However, the most efficient PSCs using CuPc‐based HTMs reported thus far still rely on hygroscopic p‐type dopants, which notoriously deteriorate device stability. Herein, two new CuPc derivatives are designed, namely CuPc‐Bu and CuPc‐OBu, by molecular engineering of the non‐peripheral substituents of the Pc rings, and applied as dopant‐free HTMs in PSCs. Remarkably, a small structural change from butyl groups to butoxy groups in the substituents of the Pc rings significantly influences the molecular ordering and effectively improves the hole mobility and solar cell performance. As a consequence, PSCs based on dopant‐free CuPc‐OBu as HTMs deliver an impressive power conversion efficiency (PCE) of up to 17.6% under one sun illumination, which is considerably higher than that of devices with CuPc‐Bu (14.3%). Moreover, PSCs containing dopant‐free CuPc‐OBu HTMs show a markedly improved ambient stability when stored without encapsulation under ambient conditions with a relative humidity of 85% compared to devices containing doped Spiro‐OMeTAD. This work thus provides a fundamental strategy for the future design of cost‐effective and stable HTMs for PSCs and other optoelectronic devices.     

Precursor Engineering for Ambient‐Compatible Antisolvent‐Free Fabrication of High‐Efficiency CsPbI2Br Perovskite Solar Cells

High temperature stable inorganic CsPbX₃ (X: I, Br, or mixed halides) perovskites with their bandgap tailored by tuning the halide composition offer promising opportunities in the design of ideal top cells for high‐efficiency tandem solar cells. Unfortunately, the current high‐efficiency CsPbX₃ perovskite solar cells (PSCs) are prepared in vacuum, a moisture‐free glovebox or other low‐humidity conditions due to their poor moisture stability. Herein, a new precursor system (HCOOCs, HPbI₃, and HPbBr₃) is developed to replace the traditional precursors (CsI, PbI₂, and PbBr₂) commonly used for solar cells of this type. Both the experiments and calculations reveal that a new complex (HCOOH?Cs⁺) is generated in this precursor system. The new complex is not only stable against aging in humid air ambient at 91% relative humidity, but also effectively slows the perovskite crystallization, making it possible to eliminate the popular antisolvent used in the perovskite CsPbI₂Br film deposition. The CsPbI₂Br PSCs based on the new precursor system achieve a champion efficiency of 16.14%, the highest for inorganic PSCs prepared in ambient air conditions. Meanwhile, high air stability is demonstrated for an unencapsulated CsPbI₂Br PSC with 92% of the original efficiency remaining after more than 800 h aging in ambient air.     

A Novel Anion Doping for Stable CsPbI2Br Perovskite Solar Cells with an Efficiency of 15.56% and an Open Circuit Voltage of 1.30 V

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I^? is partially replaced with the acetate anion (Ac^?) in the CsPbI₂Br framework, producing multiple benefits. The Ac^? doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_2?x Br(Ac)_x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_2?x Br(Ac)_x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V_oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V_oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_2?x Br(Ac)_x PSCs exhibit high reproducibility and good stability. The stable CsPbI_2?x Br(Ac)_x PSCs with high V_oc and PCE are desirable for tandem solar cell applications.     

Solvent Engineering Boosts the Efficiency of Paintable Carbon‐Based Perovskite Solar Cells to Beyond 14%

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (PSCs) have shown much promise for practical applications because of their high stability and low cost. However, the efficiencies of this kind of PSCs are still relatively low, especially for the simplest paintable carbon‐based PSCs, in comparison with the organic HTM‐based PSCs. This can be imputed to the perovskite deposition methods that are not very suitable for this kind of devices. A solvent engineering strategy based on two‐step sequential method is exploited to prepare a high‐quality perovskite layer for the paintable carbon‐based PSCs in which the solvent for CH₃NH₃I (MAI) solution at the second step is changed from isopropanol (IPA) to a mixed solvent of IPA/Cyclohexane (CYHEX). This mixed solvent not only accelerates the conversion of PbI₂ to CH₃NH₃PbI₃ but also suppresses the Ostwald ripening process resulting in a high‐quality perovskite layer, e.g., pure phase, even surface, and compact capping layer. The paintable carbon‐based PSCs fabricated from IPA/CYHEX solvent exhibits a considerable enhancement in photovoltaic performance and performance reproducibility in comparison with that from pure IPA, especially on fill factor (FF), owing mainly to the better contact of perovskite/carbon interface, lower trap density in perovskite, higher light absorption ability, and faster charge transport of perovskite layer. As a result, the highest power conversion efficiency (PCE) of 14.38% is obtained, which is a record value for carbon‐based HTM‐free PSCs. Furthermore, a PCE of as high as 10% is achieved for the large area device (1 cm²), also the highest of its kind.     

The Importance of Pendant Groups on Triphenylamine‐Based Hole Transport Materials for Obtaining Perovskite Solar Cells with over 20% Efficiency

Tremendous progress has recently been achieved in the field of perovskite solar cells (PSCs) as evidenced by impressive power conversion efficiencies (PCEs); but the high PCEs of >20% in PSCs has so far been mostly achieved by using the hole transport material (HTM) spiro‐OMeTAD; however, the relatively low conductivity and high cost of spiro‐OMeTAD significantly limit its potential use in large‐scale applications. In this work, two new organic molecules with spiro[fluorene‐9,9′‐xanthene] (SFX)‐based pendant groups, X26 and X36, have been developed as HTMs. Both X26 and X36 present facile syntheses with high yields. It is found that the introduced SFX pendant groups in triphenylamine‐based molecules show significant influence on the conductivity, energy levels, and thin‐film surface morphology. The use of X26 as HTM in PSCs yields a remarkable PCE of 20.2%. In addition, the X26‐based devices show impressive stability maintaining a high PCE of 18.8% after 5 months of aging in controlled (20%) humidity in the dark. We believe that X26 with high device PCEs of >20% and simple synthesis show a great promise for future application in PSCs, and that it represents a useful design platform for designing new charge transport materials for optoelectronic applications.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).     

Efficiency Enhancement of Polymer Solar Cells Based on Poly(3‐hexylthiophene)/Indene‐C70 Bisadduct via Methylthiophene Additive

Photovoltaic performance of polymer solar cells based on poly(3‐hexylthiophene) (P3HT) as the donor and indene‐C₇₀ bisadduct (IC₇₀BA) as the acceptor is improved by adding 3 vol% 3‐methylthiophene (MT) or 3‐hexylthiophene (HT) as processing additives. The results of UV‐vis absorption spectroscopy, X‐ray diffraction analysis and atomic force microscopy indicate that with the MT or HT processing additive, the active layer of the blend of P3HT/IC₇₀BA showed strengthened absorbance, enhanced crystallinity and improved film morphology. The power conversion efficiency (PCE) of the PSCs was improved from 5.80% for the device without the additive to 6.35% for the device with HT additive and to 6.69% with MT additive. The PCE of 6.69% is the top value reported so far for the PSCs based on P3HT.     

Morphology Controlling of All‐Inorganic Perovskite at Low Temperature for Efficient Rigid and Flexible Solar Cells

All‐inorganic cesium lead halide (CsPbX₃) perovskites have emerged as promising photovoltaic materials owing to their superior thermal stability compared to traditional organic–inorganic hybrid counterparts. However, the CsPbX₃ perovskites generally need to be prepared at high‐temperature, which restricts their application in multilayer or flexible solar cells. Herein, the formation of CsPbX₃ perovskites at room‐temperature (RT) induced by dimethylsulphoxide (DMSO) coordination is reported. It is further found that a RT solvent (DMSO) annealing (RTSA) treatment is valid to control the perovskite crystallization dynamics, leading to uniform and void‐free films, and consequently a maximum power conversion efficiency (PCE) of 6.4% in the device indium tin oxide (ITO)/NiO _x /RT‐CsPbI₂Br/C₆₀/Bathocuproine (BCP)/Ag, which is, as far as it is known, the first report of RT solution‐processed CsPbX₃‐based perovskite solar cells (PSCs). Moreover, the efficiency can be boosted up to 10.4% by postannealing the RTSA‐treated perovskite film at an optimal temperature of 120 °C. Profiting from the moderate temperature, flexible PSCs are also demonstrated with a maximum PCE of 7.3% for the first time. These results may stimulate further development of all‐inorganic CsPbX₃ perovskites and their application in flexible electronics.     

Surface Engineering of TiO2 ETL for Highly Efficient and Hysteresis‐Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open‐Circuit Voltage and Stability

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high‐performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO₂ (a‐SnO₂) between the TiO₂ ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double‐layer structure of TiO₂ compact layer (c‐TiO₂) and a‐SnO₂ ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a‐SnO₂/c‐TiO₂ ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c‐TiO₂ based device. Moreover, the modified device demonstrates a maximum open‐circuit voltage (V_oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c‐TiO₂/a‐SnO₂ retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c‐TiO₂ (67%) based devices. Interestingly, using a‐SnO₂/c‐TiO₂ ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c‐TiO₂ based device (28% PCE loss).     

SrTiO3/Al2O3‐Graphene Electron Transport Layer for Highly Stable and Efficient Composites‐Based Perovskite Solar Cells with 20.6% Efficiency

For practical use of perovskite solar cells (PSCs) the instability issues of devices, attributed to degradation of perovskite molecules by moisture, ions migration, and thermal‐ and light‐instability, have to be solved. Herein, highly efficient and stable PSCs based on perovskite/Ag‐reduced graphene oxide (Ag‐rGO) and mesoporous Al₂O₃/graphene (mp‐AG) composites are reported. The mp‐AG composite is conductive with one‐order of magnitude higher mobility than mp‐TiO₂ and used for electron transport layer (ETL). Compared to the mp‐TiO₂ ETL based cells, the champion device based on perovskite/Ag‐rGO and SrTiO₃/mp‐AG composites shows overall a best performance (i.e., V_OC = 1.057 V, J_SC = 25.75 mA cm^?2, fill factor (FF) = 75.63%, and power conversion efficiency (PCE) = 20.58%). More importantly, the champion device without encapsulation exhibits not only remarkable thermal‐ and photostability but also long‐term stability, retaining 97–99% of the initial values of photovoltaic parameters and sustaining ≈93% of initial PCE over 300 d under ambient conditions.     

Spiro‐Phenylpyrazole‐9,9′‐Thioxanthene Analogues as Hole‐Transporting Materials for Efficient Planar Perovskite Solar Cells

Perovskite solar cells have emerged as a promising technique for low‐cost, light weight, and highly efficient photovoltaics. However, they still largely rely on 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (Spiro‐OMeTAD) to serve as hole‐transporting materials (HTMs). Here, a series of HTMs with small molecular weight is designed, which are constructed on a spiro core involving phenylpyrazole and a second heteroaromatics, i.e., xanthene (O atom), thioxanthene (S atom), and acridine (N atom). Through varying from phenylpyrazole substituted xanthene ( PPyra‐XA ), thioxanthene ( PPyra‐TXA ), to acridine ( PPyra‐ACD ), their optical and electrochemical properties, hole mobilities, and the photovoltaic performance are optimized. As a consequence, PPyra‐TXA based device exhibits the highest power conversion efficiency (PCE) of 18.06%, outperforming that of Spiro‐OMeTAD (16.15%), which could be attributed to the enhancement of hole mobility exerted by the thioxanthene. In addition, the dopant‐free device shows PCE of 11.7%. These results open a new direction for designing spiro‐HTMs by simple modification of chemical structures.     

Pb‐Reduced CsPb0.9Zn0.1I2Br Thin Films for Efficient Perovskite Solar Cells

Fabrication of efficient Pb reduced inorganic CsPbI₂Br perovskite solar cells (PSC) are an important part of environment‐friendly perovskite technology. In this work, 10% Pb reduction in CsPb_0.9Zn_0.1I₂Br promotes the efficiency of PSCs to 13.6% (AM1.5, 1sun), much higher than the 11.8% of the pure CsPbI₂Br solar cell. Zn²⁺ has stronger interaction with the anions to manipulate crystal growth, resulting in size‐enlarged crystallite with enhanced growth orientation. Moreover, the grain boundaries (GBs) are passivated by the Cs‐Zn‐I/Br compound. The high quality CsPb_0.9Zn_0.1I₂Br greatly diminishes the GB trap states and facilitates the charge transport. Furthermore, the Zn4s‐I5p states slightly reduce the energy bandgap, accounting for the wider solar spectrum absorption. Both the crystalline morphology and energy state change benefit the device performance. This work highlights a nontoxic and stable Pb reduction method to achieve efficient inorganic PSCs.     

Fusing Nanowires into Thin Films: Fabrication of Graded‐Heterojunction Perovskite Solar Cells with Enhanced Performance

Perovskite solar cells (PSCs) have recently experienced a rapid rise in power conversion efficiency (PCE), but the prevailing PSCs with conventional mesoscopic or planar device architectures still contain nonideal perovskite/hole‐transporting‐layer (HTL) interfaces, limiting further enhancement in PCE and device stability. In this work, CsPbBr₃ perovskite nanowires are employed for modifying the surface electronic states of bulk perovskite thin films, forming compositionally‐graded heterojunction at the perovskite/HTL interface of PSCs. The nanowire morphology is found to be key to achieving lateral homogeneity in the perovskite film surface states resulting in a near‐ideal graded heterojunction. The hidden role of such lateral homogeneity on the performance of graded‐heterojunction PSCs is revealed for the first time. The resulting PSCs show high PCE up to 21.4%, as well as high operational stability, which is superior to control PSCs fabricated without CsPbBr₃‐nanocrystals modification and with CsPbBr₃‐nanocubes modification. This study demonstrates the promise of controlled hybridization of perovskite nanowires and bulk thin films for more efficient and stable PSCs.