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Analytical Study of Carrier Generation Rate in Graphene Nanoscroll |
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| Authors: | Amiri Iraj S Mohammadi Hossein |
| Institution: | 1.Computational Optics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam ;2.Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam ;3.Department of Electrical Engineering, Sarvestan Branch, Islamic Azad University, Sarvestan, Iran ; |
| Abstract: | Graphene nanoscroll introduced recently is another form of a graphene-based two-dimensional material, which is especially attractive in nanoelectronic applications. As carriers can travel ballistically or semi-ballistically, they can reach high-speed and energy if the channel length is enough. Therefore, they can collide and result in an excessive current called ionisation current. As a result, it is important to study this mechanism carefully. In this paper, we propose an analytical approach to calculate an ionisation coefficient. |
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