Binary Indium–Zinc Oxide Photoanodes for Efficient Dye‐Sensitized Solar Cells

The benefits of incorporating binary metal‐oxide electrodes en route toward efficient dye‐sensitized solar cells (DSSCs) have recently emerged. The current work aims at realizing efficient indium‐doped zinc oxide based DSSCs by means of enhancing charge transport processes and reducing recombination rates. Electrochemical impedance spectroscopic assays corroborate that low amounts of indium reduce charge transport resistances and increase electron recombination resistances. The latter are in concert with a remarkable enhancement of the charge collection efficiency from 33% to 83% for devices with ZnO and In₁₅Zn₈₅O photoanodes, respectively. Going beyond 15 mol% of indium, an effective electron trapping increases the charge transport resistance and, in turn, dramatically reduces charge collection efficiency. Upon implementing In₁₅Zn₈₅O into an electron cascade photoanode architecture featuring an In₁₅Zn₈₅O bottom layer and a ZnO top layer, a device efficiency of 5.77% and a significantly high current density of 20.4 mA cm^?2 in binary ZnO DSSCs are achieved.