首页 | 本学科首页   官方微博 | 高级检索  
     


Osmotin-expressing transgenic tea plants have improved stress tolerance and are of higher quality
Authors:Amita Bhattacharya  Uksha Saini  Robin Joshi  Devinder Kaur  Awadhesh Kumar Pal  Nitish Kumar  Ashu Gulati  Prashant Mohanpuria  Sudesh Kumar Yadav  Sanjay Kumar  Paramvir Singh Ahuja
Affiliation:1. CSIR- Institute of Himalayan Bioresource Technology, Council of Scientific and Industrial Research (CSIR), Palampur, 176061, Himachal Pradesh, India
2. Davis Heart and Lung Research Institute, Ohio State University Medical Center, W12th Ave., Columbus, OH, 43012, USA
4. Department of Plant Breeding and Genetics, Bihar Agricultural University, Sabour, Bhagalpur, 813210, Bihar, India
3. Centre for Biological Sciences (Biotechnology), School of Earth, Biological and Environmental Sciences, Central University of Bihar, Patna, 800014, Bihar, India
Abstract:Drought is a major stress that affects the yield and quality of tea, a widely consumed beverage crop grown in more than 20 countries of the world. Therefore, osmotin gene-expressing transgenic tea plants produced using earlier optimized conditions were evaluated for their tolerance of drought stress and their quality. Improved tolerance of polyethylene glycol-induced water stress and faster recovery from stress were evident in transgenic lines compared with the normal phenotype. Significant improvements in growth under in-vitro conditions were also observed. Besides enhanced reactive oxygen species-scavenging enzyme activity, the transgenic lines contained significantly higher levels of flavan-3-ols and caffeine, key compounds that govern quality and commercial yield of the beverage. The selected transgenic lines have the potential to meet the demands of the tea industry for stress-tolerant plants with higher yield and quality. These traits of the transgenic lines can be effectively maintained for generations because tea is commercially cultivated through vegetative propagation only.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号