Glow discharge with electrostatic confinement of electrons in a chamber bombarded by fast electrons

A metal substrate is immersed in plasma of glow discharge with electrostatic confinement of electrons inside the vacuum chamber volume V ≈ 0.12 m³ filled with argon or nitrogen at pressures 0.005–5 Pa, and dependence of discharge characteristics on negative substrate potential is studied. Emitted by the substrate secondary electrons bombard the chamber walls and it results in electron emission growth of the chamber walls and rise of gas ionization intensity inside the chamber. Increase of voltage U between the chamber and the substrate up to 10 kV at a constant discharge current I _d in the anode circuit results in a manifold rise of current I in the substrate circuit and decrease of discharge voltage U _d between the anode and the chamber from hundreds to tens of volts. At pressure p < 0.05 Pa nonuniformity of plasma density does not exceed ∼10%. Using the Child-Langmuir law, as well as measurement results of sheath width d between homogeneous plasma and a lengthy flat substrate dependent on voltage U ion current density j _i on the substrate surface and ion-electron emission coefficient γ _i are calculated. After the current in circuit of a substrate made of the same material is measured, the γ _i values may be used to evaluate the average dose of ion implantation. The rate of dose rise at a constant high voltage U is by an order of magnitude higher than in known systems equipped with generators of square-wave high-voltage pulses. Application to the substrate of 10-ms-wide sinusoidal high-voltage pulses, which follow each other with 100-Hz frequency, results in synchronous oscillations of voltage U and ion current I _i in the substrate circuit. In this case variation of the sheath width d due to oscillations of U and Ii is insignificant and d does not exceed several centimeters thus enabling substrate treatment in a comparatively small vacuum chamber.