Synthesis and photoluminescence characteristics of Sm3+‐doped Bi4Si3O12 red‐emitting phosphor

A series of novel red‐emitting Sm³⁺‐doped bismuth silicate phosphors, Bi₄Si₃O₁₂:xSm³⁺ (0.01 ≤ x ≤ 0.06), were prepared via the sol–gel route. The phase of the synthesized samples calcinated at 800 °C is isostructural with Bi₄Si₃O₁₂ according to X‐ray diffraction results. Under excitation with 405 nm light, some typical peaks of Sm³⁺ ions centered at 566, 609, 655 and 715 nm are found in the emission spectra of the Sm³⁺‐doped Bi₄Si₃O₁₂ phosphors. The strongest peak located at 609 nm is due to ⁴G_5/2–⁶H_7/2 transition of Sm³⁺. The luminescence intensity reaches its maximum value when the Sm³⁺ ion content is 4 mol%. The results suggest that Bi₄Si₃O₁₂:Sm³⁺ may be a potential red phosphor for white light‐emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.