Tensile Stress in Nanometre Thick MBE Grown CaF2 on (111) Si |
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| Authors: | Ramírez A Tempel A Zehe A |
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| Institution: | (1) Universidad Autónoma de Puebla,Instituto de Ciencias, Col. San Manuel, 72550 Puebla, México;(2) FachHochschule Lausitz, Senftenberg, Germany |
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| Abstract: | CaF2 epitaxial layers were prepared by MBE and investigated by RBS and ion channeling measurements. Films of about 30 nm thickness were found to be strained by tensile stress causing a rhombohedral symmetry of the layers. These results are interpreted in terms of the different thermal expansion coefficients of substrate and deposit, respectively. |
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| Keywords: | Molecular interface structure molecular beam epitaxy tensile stress epitaxy heterosystem Silicon-on-Insulator |
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