Overcoming Efficiency Limitations of SnS‐Based Solar Cells |
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| Authors: | Prasert Sinsermsuksakul Leizhi Sun Sang Woon Lee Helen Hejin Park Sang Bok Kim Chuanxi Yang Roy G Gordon |
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| Institution: | 1. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, U.S.A;2. School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, U.S.A;3. Department of Physics and Division of Energy Systems Research, Ajou University, Suwon, Korea |
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| Abstract: | Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H2S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO2 between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers. |
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| Keywords: | tin sulfide surface passivation solar cells photovoltaic devices thin films |
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