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Low‐Temperature Combustion‐Synthesized Nickel Oxide Thin Films as Hole‐Transport Interlayers for Solution‐Processed Optoelectronic Devices
Authors:Sai Bai  Motao Cao  Yizheng Jin  Xinliang Dai  Xiaoyong Liang  Zhizhen Ye  Min Li  Jipeng Cheng  Xuezhang Xiao  Zhongwei Wu  Zhouhui Xia  Baoquan Sun  Ergang Wang  Yueqi Mo  Feng Gao  Fengling Zhang
Institution:1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China;2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, P. R. China;3. Center for Chemistry of High‐Performance and Novel Materials, Zhejiang University, Hangzhou, P. R. China;4. Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China;5. Department of Chemical and Biological, Engineering/Polymer Technology, Chalmers University of Technology, G?teborg, Sweden;6. Key Laboratory of Special Functional Materials, South China University of Technology, Guangzhou, China;7. Biomolecular and Organic Electronics, IFM and Center of Organic Electronics, Link?ping University, Link?ping, Sweden
Abstract:
Keywords:solution‐processed materials  optoelectronics  hole transport layers  combustion  NiOx films
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