Synthesis and luminescence of novel near‐infrared emitting BaZrSi3O9:Cr3+ phosphors

The BaZrSi₃O₉:Cr³⁺ phosphors were prepared by a high temperature solid state method. Their structures were confirmed with XRD and their luminescence properties were investigated. Under excitation at 455 nm, BaZrSi₃O₉:Cr³⁺ phosphors exhibited a broad near infrared emission band peaked at 800 nm, which was assigned to the ⁴T₂→⁴A₂ transition of Cr³⁺. The near infrared emission intensity reached a maximum at Cr³⁺ concentration of 0.7%. There was a concentration quenching phenomenon of Cr³⁺ in BaZrSi₃O₉ matrix and the corresponding concentration quenching mechanism was investigated. With efficient near infrared emission in the range of 700–1000 nm, BaZrSi₃O₉:Cr³⁺ phosphors may find applications in solar energy conversion.