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电压依赖性离子通道门控的分子机制
引用本文:Lu GW. 电压依赖性离子通道门控的分子机制[J]. 生理科学进展, 1997, 28(4): 306-310
作者姓名:Lu GW
作者单位:首都医科大学神经生物学系
摘    要:50年代Hodgkin和Huxley双通道模型及其激活与失活学说,正逐步被80年代以来的分子生物学和电生理学研究所证实。Na^+、K^+离子通道的激活主要决定于高度保守的带正电荷氨基酸残基密集的S4段,由膜内向膜外方向的拧改锥样旋转。Na^+通道的失活主要与其Ⅲ-Ⅳ功能区之间的胞内连结襻的“铰链盖”样运动有关;K^+通的失活分N-、C-、P-三型,分别发生在N-、C-末端和P区,其N型失活与N-末

关 键 词:离子通道 电压依赖性 门控 分子机制

Molecular mechanisms underlying gating activity of voltage dependent ion channels
Lu G W. Molecular mechanisms underlying gating activity of voltage dependent ion channels[J]. Progress in Physiological Sciences, 1997, 28(4): 306-310
Authors:Lu G W
Affiliation:Department of Neurobiology, Capital University of Medical Sciences, Beijing.
Abstract:A model of two-channel and its activation and inactivation proposed by Hodgkin and Huxley in 1950s have been continuously confirmed by molecular biological and electrophysiological studies since 1980s. The activation of Na+ and K+ channels seems to be dependent on screw-like rotation outward of S4 segment which is highly conservative and very rich in positively charged amino acid residues. The inactivation of Na+ channels appears to be related to "hinged lids" like movement of intracellular linker between domain III and IV; type N-, C-, and P- of inactivation can be divided in K+ channels, which seems to occur mainly in terminal N-, C- and region P, respectively and the N-type inactivation seems to be related to "ball and chain" like movement of terminal N.
Keywords:Ion channel  Voltage dependency  Gating  Activation  Inactivation  
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