Influence of laser light on mycelial growth of Hebeloma mesophaeum and ectomycorrhizal development on Scots pine

 The effects of exposure to helium-neon (He-Ne) or Argon (Ar) laser light (λ=632.8 nm and 514 nm, respectively) on the growth of Hebeloma mesophaeum mycelium in pure culture were studied. Growth rates were highest after exposure to the He-Ne laser (1×60 s)+Ar laser (2×60 s) and to the He-Ne laser for 3×30. Container-grown Pinus sylvestris (pine) seedlings were inoculated with a water suspension of H. mesophaeum mycelium previously exposed to different kinds of laser light. After 3 months, the percentage of mycorrhizal associations on pine roots was 34.3% higher after He-Ne laser treatment and 47.1% higher after Ar laser treatment than in the controls with untreated fungus. However, seedlings infected with treated fungus were smaller than the control. Overall, laser light stimulated growth of H. mesophaeum mycelia in pure culture and enhanced mycorrhizal development on Scots pine seedlings.