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Increase in the Figure of Merit by Cd‐Substitution in Sn1–xPbxTe and Effect of Pb/Sn Ratio on Thermoelectric Properties |
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| Authors: | Mi‐Kyung Han Xiaoyuen Zhou Ctirad Uher Sung‐Jin Kim Mercouri G Kanatzidis |
| Institution: | 1. Department of Chemistry and Nano Science, Ewha Womans University, Seoul 120‐750, Korea;2. Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA;3. Department of Chemistry, Northwestern University, Evanston, IL 60208, USA |
| Abstract: | The effects of Cd‐doping on the thermoelectric properties of Sn1–xPbxTe are investigated and compared to the properties of the corresponding Sn1–xPbxTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn1–xPbxTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn1–xPbx)0.97Cd0.03Te than that of undoped Sn1–xPbxTe. The maximum ZT (～0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ～ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples. |
| Keywords: | energy conversion narrow gap semiconductors PbTe SnTe p‐type semiconductors |