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Zinc silicate phosphor: Insights of X-ray induced and temperature enabled luminescence |
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| Authors: | P Diana Subramanian Saravanakumar D Sivaganesh V Sivakumar Yang Li S Sebastian Ji-Man Kim Padmanathan Karthick Kannan L Sangeetha Vijayendran K K Praneeth |
| Institution: | 1. Department of Physics, Kalasalingam Academy of Research and Education, Krishnan Koil, Tamil Nadu, India;2. Department of Physics, Kalasalingam Academy of Research and Education, Krishnan Koil, Tamil Nadu, India
Ural Federal University, Mira str., Yekaterinburg, Russia;3. Department of Physics, M. Kumarasamy College of Engineering, Karur, Tamil Nadu, India;4. School of Biomedical Engineering, Guangzhou Medical University, Guangzhou, Guangdong, China;5. Department of Physics, Arul Anandar College, Karumathur, Madurai, Tamil Nadu, India;6. Department of Chemistry, Sungkyunkwan University, Suwon, The Republic of Korea;7. Department of Physics, Saveetha Engineering College, Chennai, Tamil Nadu, India;8. Department of Chemistry, Kalasalingam Academy of Research and Education, Krishnan Koil, Tamil Nadu, India |
| Abstract: | The present investigation deals with the effect of calcination temperature on the structural and thermoluminescent (TL) properties of Zn2SiO4 materials. For this study, Zn2SiO4 was prepared via a simple hydrothermal route and calcinated at temperatures from 700°C to 1100°C in an air atmosphere. TL data of all Zn2SiO4 samples showed two peaks at around 240°C and 330°C due to the formation of the luminescence centre during X-ray irradiation. More interestingly, the Zn2SiO4 sample calcinated at 900°C exhibited a shift in the TL peak (282°C and 354°C) with an optimal TL intensity attributed to its good crystallinity with a well-defined hexagonal plate-like morphology. X-ray-irradiated Zn2SiO4 samples calcinated at 900°C exhibited a high-temperature TL glow curve peak, suggesting that the present material could be used for high-temperature dosimetry applications. |
| Keywords: | dosimetry applications Rietveld refinement thermoluminescence Zn2SiO4 |