Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu2BaSnS4 Thin‐Film Solar Cells |
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Authors: | Jie Ge Prakash Koirala Corey R. Grice Paul J. Roland Yue Yu Xinxuan Tan Randy J. Ellingson Robert W. Collins Yanfa Yan |
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Affiliation: | Department of Physics and Astronomy & Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, United States |
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Abstract: | Earth‐abundant Cu2BaSnS4 (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 104 cm?1, and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO2 (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact). |
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Keywords: | Cu2BaSnS4 earth‐abundant open‐circuit voltage oxygenated CdS solar cells |
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