An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors |
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Authors: | J.L. Autran ¶ D. Munteanu O. Tintori E. Decarre A.M. Ionescu |
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Affiliation: | 1. Laboratory for Materials and Microelectronics of Provence (L2MP, UMR CNRS 6137) Batiment IRPHE , 49 rue Joliot-Curie,BP 146, F-13384, Marseille Cedex 13, France autran@newsup.univ-mrs.fr;3. Laboratory for Materials and Microelectronics of Provence (L2MP, UMR CNRS 6137) Batiment IRPHE , 49 rue Joliot-Curie,BP 146, F-13384, Marseille Cedex 13, France;4. Electronics Laboratories (LEG), Swiss Federal Institute of Technology Lausanne , CH-1015, Lausanne, Switzerland |
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Abstract: | The subthreshold characteristic of ultra-thin (i.e. quantum-wire), ultra-short double-gate transistors (symmetric structures) working in the ballistic regime has been analytically modeled. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as Ioff-current or subthreshold swing, can be easily evaluated through this full analytical approach, which also provides a complete set of equations for developing equivalent-circuit model used in ICs simulation. |
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Keywords: | Ballistic transport Double-gate devices Analytical modeling Subthreshold current model |
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