| Abstract: | Organic–inorganic halide perovskites are promising materials for next‐generation photovoltaic device due to their attractive photoelectrical properties such as strong light absorption, high carrier mobility, and tunable bandgap. Generally, perovskite solar cells require carrier transport layers (CTL) to provide a built‐in electric field and reduce the recombination rate. However, the construction of suitable electron‐ and hole‐transport layers is not cost effective, impairing the commercial application of the devices. An n–p perovskite homojunction absorber with a graded bandgap is developed by introducing a three‐step dynamic spin‐coating strategy and variable valence Sn elements. The bandgap of the perovskite absorber is gradually manipulated from 1.53 eV (the bottom) to 1.27 eV (the top). The electronic behavior is also transformed from n‐type (excess PbI2, the bottom) to p‐type (Sn vacancy, the top) in a very short distance (50 nm). This designed perovskite homojunction electronic structure not only expands the light harvesting range from 800 to 970 nm which provides potential to break the PCE limits, but also promotes oriented carrier transportation and weakens the dependence on CTL. The demonstrated asymmetrical active layer shows a brand‐new approach to simplify the device structure and boost the performance of CTL‐free perovskite solar cells. |
