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Optimization of Optoelectronic Plasmonic Structures
Authors:Hengliang Wang  Zhenghua An  Che Qu  Shiyi Xiao  Lei Zhou  Susumu Komiyama  Wei Lu  Xuechu Shen  Paul K. Chu
Affiliation:(1) Institute of Advanced Materials and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, People’s Republic of China;(2) Department of Basic Science, University of Tokyo, Komaba 3-8-9, Meguro-ku, Tokyo 153-8902, Japan;(3) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China;(4) Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China;
Abstract:We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photo-coupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.
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