首页 | 本学科首页   官方微博 | 高级检索  
     


Study of the Vapor Phase Over Fusarium Fungi Cultured on Various Substrates
Authors:Elena I. Savelieva  Liudmila K. Gustyleva  Elizaveta D. Kessenikh  Natalya S. Khlebnikova  John Leffingwell  Olga P. Gavrilova  Tatiana Yu. Gagkaeva
Affiliation:1. Research Institute of Hygiene, Occupational Pathology and Human Ecology Federal State Unitary Enterprise, Federal Medical Biological Agency, Vsevolozhsky District, Leningrad Region;2. +7‐812‐4496177+7‐812‐4496177;3. +1 ‐770‐889‐5111+1‐770‐887‐0089;4. Leffingwell & Associates, Canton, GA, USA;5. All‐Russian Institute of Plant Protection (VIZR) Podbelskogo shosse, Pushkin
Abstract:The compositions of volatile organic compounds (VOCs) emitted by Fusarium fungi (F. langsethiae, F. sibiricum, F. poae, and F. sporotrichioides) grown on two nutritive substrates: potato sucrose agar (PSA) and autoclaved wheat kernels (WK) were investigated. The culturing of fungi and study of their VOC emissions were performed in chromatographic vials at room temperature (23 – 24 °C) and the VOCs were sampled by a solid‐phase microextraction on a 85 μm carboxen/polydimethylsiloxane fiber. GC/MS was performed using a 60‐m HP‐5 capillary column. Components of the VOC mixture were identified by electron impact mass spectra and chromatographic retention indices (RIs). The most abundant components of the VOC mixture emitted by Fusarium fungi are EtOH, AcOH, iBuOH, 3‐methylbutan‐1‐ol, 2‐methylbutan‐1‐ol, ethyl 3‐methylbutanoate, terpenes with M 136, sesquiterpenes with M 204 (a total of about 25), and trichodiene. It was found that the strains grown on PSA emit a wider spectrum and larger amount of VOCs compared with those grown on wheat kernels. F. langsethiae strain is the most active VOC producer on both substrates. The use of SPME and GC/MS also offers the potential for differentiation of fungal species and strains.
Keywords:Fusarium fungi  Gas chromatography/mass spectrometry  Headspace solid‐phase microextraction  Retention indices  Volatile organic compounds
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号