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Broadband Optical Reflection Modulator in Indium-Tin-Oxide-Filled Hybrid Plasmonic Waveguide with High Modulation Depth |
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| Authors: | Han Lei Ding Huafeng Huang Tianye Wu Xu Chen Bingwei Ren Kaixuan Fu Songnian |
| Institution: | 1.School of Mechanical Engineering and Electronic Information, China University of Geosciences (Wuhan), Wuhan, 430074, China ;2.National Engineering Laboratory for Next Generation Internet Access System, School of Optics and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, China ; |
| Abstract: | A surface plasmon resonance (SPR)-based optical reflection modulator consisting of vertically stacked silica-silicon-HfO2-ITO-HfO2-Ag-prism multilayer is proposed and numerically investigated. The free carrier-concentration-dependent permittivity of indium-tin-oxide (ITO) at the HfO2/ITO interface induces an epsilon-near-zero (ENZ) effect contributing to strong field enhancement and modifies the SPR condition of incident light. With optimal geometry parameters and proper design of carrier concentration at the accumulation layer, modulation depth (MD) of ~100% and insertion loss (IL) of 3.7% can be simultaneously achieved. The IL can be further reduced by engineering silicon layer thickness. Moreover, the device offers a broadband operation wavelength from 1.5 to 1.6 μm with the variations of MD and IL smaller than 4 and 3%, respectively. |
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