Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge |
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Authors: | Burachevsky Yu A Burdovitsin V A Oks E M |
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Institution: | 1.Tomsk State University of Control Systems and Radioelectronics, ul. Lenina 40, Tomsk, 634050, Russia ; |
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Abstract: | The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained
glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current
flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2. |
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