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Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge
Authors:Burachevsky  Yu A  Burdovitsin  V A  Oks  E M
Institution:1.Tomsk State University of Control Systems and Radioelectronics, ul. Lenina 40, Tomsk, 634050, Russia
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Abstract:The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2.
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