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Simulation of the molecular and electronic structure of heterofullerenes C55Y5 (Y=Si, Ge, Sn, B, Al, N, P, SiH, GeH, SnH) and their η-π-complexes with Li by the MNDO method
Authors:Anatolii L Chistyakov and Ivan V Stankevich
Institution:

Nesmeyanov Institute of Organoelement Compounds of Russian Academy of Sciences, 28 Vavilov St., 117813, Moscow, Russia

Abstract:Qualitative estimates of the relative stability of hypothetical heterofullerenes C55Y5 (Y=Si, Ge, Sn, B, Al, N, P, SiH, GeH, SnH) and some η5-π-complexes LiC55Y5 were carried out by the MNDO method. Atoms Y (or groups XH) are assumed to substitute those C atoms in fullerene C60 which are located at the greek small letter alpha-positions of a separated pentagonal face (pent*) of this polyhedral molecule. It is shown that the spin densities in radicals C55Y5 (Y=SiH, GeH, SnH, B, Al, N, P) are localized on the separated pentagon atoms and the Li-pentagonal face (Li-pent*) bonds in η5-π-complexes of these radicals with the Li atom are considerably stronger than Li-pent* bonds in complexes η5-π-LiC60]+ and η5-π-LiC60] of unsubstituted C60. In addition, it is established that the Li-pent* bond energies in η5-π-complexes LiC55B5 and LiC55Al5 exceed the energy of the Li-pent* bond in the η5-π-complex LiC60H5 studied earlier. In contrast, the energies of similar bonds for Y=N, P are close to the energy of the Li-pent* bond in the η5-π-complex LiC60H5.
Keywords:Fullerenes  Heterofullerenes  Electronic structures  MNDO method
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