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Base temperature and heat units for leaf flushing emission and growth ofHevea brasiliensis Muell. Arg. |
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| Authors: | José Pires de Lemos Filho Nilson Augusto Villa Nova Hilton Silveira Pinto |
| Institution: | (1) Departamento de Botânica/ICB, Universidade Fed. de Minas Gerais CEP, 31270-210 Belo Horizonte, Minas Gerais, Brazil;(2) Departamento de Fisica e Meteorologia/ESALQ, Universidade de São Paulo, São Paulo, Brazil;(3) Departamento de Fisiologia Vegetal/IB, Universidade de Campinas, São Paulo, Brazil |
| Abstract: | In this study we determined the base temperature and Heat units for leaf flushing initiation and growth of RRIM-600 and GT1Hevea clones. The minimum base temperature was found to be approximately 16° C for leaf flushing emission and 19° C for shoot growth in terms of height. Approximately 420 degree days at 16° C as base temperature is required for successive leaf flushing initiation. Linear equations with correlation coefficients above 0.95 allow an estimation of the height increase from the accumulated degree days, corrected or otherwise for photoperiod. The highest correlation coefficients demonstrated a positive effect of the photoperiod among the factors influencing the shoot growth. |
| Keywords: | Hevea brasiliensis Base temperature Heat units Leaf flushing Shoot growth |
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