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Chemically-induced resistance on soybean inhibits nodulation and mycorrhization
Authors:Ludovic Faessel  Najat Nassr  Thierry Lebeau  Bernard Walter
Institution:1. RITTMO (Recherche Innovation et Transfert de Technologies pour les Matières Fertilisantes Organiques), 37, rue du Herrlisheim, F 68000, Colmar, France
2. COMPO France, Zone Industrielle, F 25220, Roche-Lez-Beaupré, France
3. Université de Haute Alsace, Equipe Dépollution Biologique des Sols, 33 rue de Herrlisheim, 68008, Colmar, France
4. Université de Haute Alsace, Laboratoire Vigne, Biotechnologies & Environnement, 33 rue de Herrlisheim, BP 50568 68008, Colmar, France
Abstract:Induced plant resistance (IR) against pathogen infection can be triggered by various chemical and biological elicitors. The effectiveness of elicitors to induce resistance as a practical means to control plant disease makes use of the plant’s own defence mechanisms triggered by resistance inducing agents. The aim of the present study was to examine the possible side effects of IR on the establishment and the efficiency of a rhizobial symbioses (Bradyrhizobium japonicum-soybean) and an arbuscular mycorrhizal symbioses (Glomus mosseae —soybean). IR was triggered by applying, acibenzolar S-methyl (ASM) at 80 mg a.i. L?1 by two ways: seed soaking or foliar spray. Chitinase activity, used as a biochemical marker of IR, increased when ASM was applied both as seed soaking or as foliar spray. In vitro ASM showed no direct effect on the growth of B. japonicum and induced, only at a high concentration, a slight inhibition effect on spore germination of G. mosseae. ASM caused after both treatments a significant decrease in the number of nodules. Nitrogen content in aerial parts and roots decreased. On the other hand, ASM showed no significant effect on the frequency of colonization by G.mosseae but reduced the intensity of colonization and the proportion of arbuscules. The possible interaction between IR and the induction and suppression of defence-like mechanisms during symbiotic processes is discussed.
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