首页 | 本学科首页   官方微博 | 高级检索  
   检索      


The Starch Statolith Hypothesis and the Interaction of Amyloplasts and Endoplasmic Reticulum in Root Geotropism
Authors:IVERSEN  TOR-HENNING; ROMMELHOFF  ANNETTE
Abstract:Roots of cress (Lepidium sativum L, ) seedlings continuouslystimulated at an angle of 135°—root tips pointingobliquely upwards—develop a larger final geotropic curvaturethan roots stimulated at 45° or 90°. This well-knownbehaviour has previously been interpreted as support for thestarch statolith hypothesis. In the present experiments two groups of cress and lettuce (Lactucasativa L.) seedlings were used: (a) the control group in whichthe roots were allowed to curve without adjustment of the stimulationangle, and (b) the test group in which the roots were readjustedat different time intervals to the original stimulation angle.They were stimulated continuously at 45°, 90°, or 135°and the development of root curvatures was followed over a periodof 5–8 h. Initially (1–2 h) the rate of curvature was approximatelythe same for 135° and 90° control and tested cress andlettuce roots. Thereafter the test roots stimulated at 135°followed a linear curvature pattern. Seedlings stimulated at45° and 90° did not show the same linearity in curvaturedevelopment in the test group. The rates of curvature in thetest group were generally higher than in the control group atangles less than 135°. Cress seedlings were examined by light and electron microscopyin order to follow the movement of the cell organelles in thestatocytes. In the statocytes of roots of test seedlings thestarch statoliths were located in the position attained beforethe first readjustment of the stimulation angle. In the statocytesof control roots the starch statoliths followed the curvatureof the root tip sliding along the cell walls and attaining therest position as in normally orientated roots. The behaviour of control and readjusted roots is interpretedas a result of interaction between starch statoliths and endoplasmicreticulum membranes.
Keywords:
本文献已被 Oxford 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号