Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography |
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| Authors: | Arash Dehzangi Farhad Larki Sabar D. Hutagalung Mahmood Goodarz Naseri Burhanuddin Y. Majlis Manizheh Navasery Norihan Abdul Hamid Mimiwaty Mohd Noor |
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| Affiliation: | 1. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia.; 2. School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, NibongTebal, Penang, Malaysia.; 3. Department of Physics, Faculty of science, Universiti Putra Malaysia, Serdang, Selangor, Malaysia.; 4. Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan, Iran.; Harbin Institute of Technology, China, |
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| Abstract: | In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm−3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA ) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity. |
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