首页 | 本学科首页   官方微博 | 高级检索  
     


Cryogenic Transmission Electron Microscopy Nanostructural Study of Shed Microparticles
Authors:Liron Issman  Benjamin Brenner  Yeshayahu Talmon  Anat Aharon
Affiliation:1. Department of Chemical Engineering and The Russell Berrie Nanotechnology Institute (RBNI), Technion-Israel Institute of Technology, Haifa, Israel.; 2. The Bruce Rappaport Faculty of Medicine, Technion-Israel Institute of Technology, Haifa, Israel.; 3. Thrombosis and Hemostasis Unit, Department of Hematology, Rambam Health Care Campus, Haifa, Israel.; University of Heidelberg Medical School, Germany,
Abstract:Microparticles (MPs) are sub-micron membrane vesicles (100–1000 nm) shed from normal and pathologic cells due to stimulation or apoptosis. MPs can be found in the peripheral blood circulation of healthy individuals, whereas elevated concentrations are found in pregnancy and in a variety of diseases. Also, MPs participate in physiological processes, e.g., coagulation, inflammation, and angiogenesis. Since their clinical properties are important, we have developed a new methodology based on nano-imaging that provides significant new data on MPs nanostructure, their composition and function. We are among the first to characterize by direct-imaging cryogenic transmitting electron microscopy (cryo-TEM) the near-to-native nanostructure of MP systems isolated from different cell types and stimulation procedures. We found that there are no major differences between the MP systems we have studied, as most particles were spherical, with diameters from 200 to 400 nm. However, each MP population is very heterogeneous, showing diverse morphologies. We investigated by cryo-TEM the effects of standard techniques used to isolate and store MPs, and found that either high-g centrifugation of MPs for isolation purposes, or slow freezing to –80°C for storage introduce morphological artifacts, which can influence MP nanostructure, and thus affect the efficiency of these particles as future diagnostic tools.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号