Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors |
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Authors: | Teoman Taskesen Janet Neerken Johannes Schoneberg Devendra Pareek Vincent Steininger Jürgen Parisi Levent Gütay |
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Affiliation: | Laboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory (EHF), Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Germany |
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Abstract: | Kesterite is an attractive material for absorber layers in thin film photovoltaics. Solar cells based on kesterite have shown a substantial progress over the last decade; nevertheless, further improvements in device efficiency are pending due to the open‐circuit voltage (Voc) deficit (i.e., difference between the maximum V oc that can be achieved according to Shockley–Queisser limit and actual V oc from the device). In this study, the optoelectronic properties of the author's internal record Cu2ZnSnSe4 solar cell, which shows a power conversion efficiency of 11.4%, are presented. The device measurements reveal a Voc deficit of 337 mV, which is one of the lowest V oc deficits in the literature. Moreover, an unusual behavior for kesterite is observed: (i) photon energy of the photoluminescence emission and (ii) the extrapolated V oc for 0 K are both matching the band gap region of the absorber. These results indicate a significant improvement in the recombination characteristics and absorber quality in comparison to other kesterite devices in literature. |
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Keywords: | Cu2ZnSnSe4 (CZTSe) kesterite selenization solar cells sputtering |
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