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Silicification of bamboo (Phyllostachys heterocycla Mitf.) root and leaf
Authors:Alexander Lux  Miroslava Luxová  Jun Abe  Shigenori Morita  Shinobu Inanaga
Institution:(1) Department of Plant Physiology, Faculty of Natural Sciences, Comenius University, Mlynská dolina B-2, 842 15 Bratislava, Slovak Republic;(2) Institute of Botany, Slovak Academy of Sciences, Dúbravská cesta 14, 842 23 Bratislava, Slovak Republic;(3) Department of Agricultural and Environmental Biology, Graduate School of Agricultural and Life Sciences, The University of Tokyo, Tokyo, 113-8657, Japan;(4) Arid Land Research Center, Tottori University, 1390 Hamasaka, Tottori, 680-0001, Japan
Abstract:Bamboo is a silicon accumulating plant. In leaves, the major place of silicon (Si) deposition is the epidermis, with the highest concentration of Si in silica cells. In bamboo roots, the deposition of Si is found only in endodermal cell walls. The silicification of leaves and roots was examined in the economically important bamboo plant Phyllostachys heterocycla, using an environmental scanning electron microscope coupled with X-ray microanalysis, as well as gravimetric quantification. The content of Si on a dry weight basis measured by gravimetric quantification was 7.6% in leaves and 2.4% in roots, respectively. Moreover, quantification of EDX data showed high Si impregnation of the inner tangential endodermal walls. Si content in this part of the root endodermal cell walls was even higher than that in the outer leaf epidermal walls, where conspicuous deposition of Si often occurs in grass plants.
Keywords:bamboo  endodermis  environmental scanning electron microscope (ESEM)  silicon deposition  X-ray microanalysis
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