High quality InP single crystal from Sumitomo electric |
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| Institution: | 1. Department of Cell Biology, New York University Langone School of Medicine, 550 First Avenue, New York, NY 10016, USA;2. Department of Medicine, New York University Langone School of Medicine, 550 First Avenue, New York, NY 10016, USA;3. Institute of Molecular Pathobiochemistry, Experimental Gene Therapy and Clinical Chemistry, RWTH University Hospital Aachen, Pauwelsstr. 30, D-52074 Aachen, Germany |
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| Abstract: | InP single crystals are primarily used as the conductive substrates for optical devices such as LEDs and lasers etc, in optoelectronics. Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has been demanding the development of a semi-insulating, SI, InP substrate on which these devices can be fabricated. The improvement of quality and reliability of these devices is being vigorously promoted, so high purity and low defect density are required of InP single crystal substrates. At Sumitomo Electric, the LEC method to grow InP single crystals with low defect density has been developed. |
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