Low Temperature Synthesis of Stable γ‐CsPbI3 Perovskite Layers for Solar Cells Obtained by High Throughput Experimentation

The structural phases and optoelectronic properties of coevaporated CsPbI₃ thin films with a wide range of CsI]/PbI₂] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI‐rich growth conditions, CsPbI₃ can be synthesized directly at low temperature into the distorted perovskite γ‐CsPbI₃ phase without detectable secondary phases. In contrast, PbI₂‐rich growth conditions are found to lead to the non‐perovskite δ‐phase. Photoluminescence spectroscopy and optical‐pump THz‐probe mapping show carrier lifetimes larger than 75 ns and charge carrier (sum) mobilities larger than 60 cm² V^?1 s^?1 for the γ‐phase, indicating their suitability for high efficiency solar cells. The dependence of the carrier mobilities and luminescence peak energy on the Cs‐content in the films indicates the presence of Schottky defect pairs, which may cause the stabilization of the γ‐phase. Building on these results, p–i–n type solar cells with a maximum efficiency exceeding 12% and high shelf stability of more than 1200 h are demonstrated, which in the future could still be significantly improved, judging on their bulk optoelectronic properties.