Synthesis and structure of a hafnium silylamide complex and the chemical vapor deposition of HfxSi1−xO2 films |
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| Authors: | Edixa de L. Jimé nez |
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| Affiliation: | Department of Chemistry, University of Houston, Houston, TX 77204-5003, USA |
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| Abstract: | The complex Hf[N(SiMe2H)2]4 was synthesized, structurally characterized, and used as a precursor with oxygen to prepare hafnium silicate thin films at substrate temperatures ?500 °C in a low-pressure CVD process. The as-deposited films were amorphous, and they remained amorphous upon annealing up to 1100 °C. |
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| Keywords: | Hafnium complex Silylamide complex MOCVD X-ray crystal structure Silicon-29 NMR |
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