首页 | 本学科首页   官方微博 | 高级检索  
   检索      

石楠拟盘多毛孢毒素产生条件初探
引用本文:蒋继志,李向彬,桂春爽,王 岩.石楠拟盘多毛孢毒素产生条件初探[J].微生物学通报,2009,36(1):0046-0050.
作者姓名:蒋继志  李向彬  桂春爽  王 岩
作者单位:河北大学生命科学学院,河北,保定,071002
基金项目:河北省自然科学基金项目(No. C2007000191)
摘    要:石楠拟盘多毛孢是引起草莓根腐病的优势病原菌之一, 本实验在明确该病菌毒素是主要致病物质的基础上, 利用叶圆片法对该菌的产毒条件进行了初步探讨, 结果表明, 除光照影响不明显外, pH值、温度、振荡及培养时间等对此菌产生毒素均有显著影响, 其最适产毒条件为:培养基初始pH值为自然pH值(约为6.2)、温度为25°C、黑暗、静置培养5 d~7 d。此外, 实验还发现该菌产生的粗毒素对玉米、黑麦和绿豆种子萌发、根或芽的延伸生长都有明显的抑制作用。

关 键 词:石楠拟盘多毛孢    毒素    培养条件

Preliminary Research on Conditions of Toxins Produced by Pestalotiopsis photiniae
JIANG Ji-Zhi,LI Xiang-Bin,GUI Chun-Shuang and WANG Yan.Preliminary Research on Conditions of Toxins Produced by Pestalotiopsis photiniae[J].Microbiology,2009,36(1):0046-0050.
Authors:JIANG Ji-Zhi  LI Xiang-Bin  GUI Chun-Shuang and WANG Yan
Institution:College of Life Sciences, Hebei University, Baoding, Hebei 071002, China;College of Life Sciences, Hebei University, Baoding, Hebei 071002, China;College of Life Sciences, Hebei University, Baoding, Hebei 071002, China;College of Life Sciences, Hebei University, Baoding, Hebei 071002, China
Abstract:Pestalotiopsis photiniae is one of the predominant pathogens of strawberry root rot disease. Based on preliminary research, it was proved that crude toxins were main pathogenic substances of the pathogen. For further investigation and utilization of toxins produced by this fungus, conditions of producing toxins were analyzed with the leaf disk method in this experiment. The result showed that pH values, cultural time, vibration, and tested temperatures obviously affected the production of toxins, except for light treatment. The most suitable culture conditions for the toxin production were pH 6.2, 25°C, darkness and stillness, for 5 d~7 d. Besides, it was discovered that crude toxins could significantly inhibit seed germination and elongation growth of roots or shoots for maize, rye and mung bean.
Keywords:Pestalotiopsis photiniae  Toxin  Culture condition
本文献已被 万方数据 等数据库收录!
点击此处可从《微生物学通报》浏览原始摘要信息
点击此处可从《微生物学通报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号