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A large gap opening of graphene induced by the adsorption of CO on the Al-doped site |
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| Authors: | Ali Ahmadi Peyghan Maziar Noei Mohammad Bigdeli Tabar |
| Institution: | 1. Young Researchers and Elite club, Central Tehran Branch, Islamic Azad University, Tehran, Iran 2. Department of Chemistry, Mahshahr Branch, Islamic Azad University, Mahshahr, Iran 3. Physics group, Science department, Islamic Azad University, Islamshahr Branch, Islamshahr, P.O. Box: 33135-369, Tehran, Iran |
| Abstract: | We investigated CO adsorption on the pristine, Stone-Wales (SW) defected, Al- and Si- doped graphenes by using density functional calculations in terms of geometric, energetic and electronic properties. It was found that CO molecule is weakly adsorbed on the pristine and SW defected graphenes and their electronic properties were slightly changed. The Al- and Si- doped graphenes show high reactivity toward CO, so calculated adoption energies are about ?11.40 and ?13.75 kcal mol?1 in the most favorable states. It was found that, among all the structures, the electronic properties of Al-doped graphene are strongly sensitive to the presence of CO molecule. We demonstrate the existence of a large Eg opening of 0.87 eV in graphene which is induced by Al-doping and CO adsorption. |
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