Enhancement of Emission Efficiency of Deep-Ultraviolet AlGaN Quantum Wells Through Surface Plasmon Coupling with an Al Nanograting Structure |
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| Authors: | Chia-Ying Su Wei-Han Chen Yang Kuo Chun-Han Lin Ming-Yen Su Meng-Che Tsai Wen-Yen Chang Chieh Hsieh Charng-Gan Tu Yu-Feng Yao Hao-Tsung Chen Yean-Woei Kiang C C Yang |
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| Institution: | 1.Institute of Photonics and Optoelectronics,National Taiwan University,Taipei,Taiwan;2.Department of Energy and Refrigerating Air-Conditioning Engineering,Tung Nan University,New Taipei City,Taiwan;3.Department of Electrical Engineering,National Taiwan University,Taipei,Taiwan |
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| Abstract: | The enhancement of the internal quantum efficiency (IQE) of deep-ultraviolet Al x Ga1-x N/Al y Ga1-y N (x < y) quantum wells (QWs) by fabricating one-dimensional Al nanogratings on a QW structure for inducing surface plasmon (SP) coupling is demonstrated. Through temperature-dependent photoluminescence (PL) measurement, the enhancements of IQE in different emission polarizations are illustrated. Due to the small difference in energy band level between the heavy/light hole and split-off valence bands, the IQEs of the transverse electric- (TE-) and transverse magnetic- (TM-) polarized emissions are about the same. When emission polarization is perpendicular to Al-grating ridges, the SP resonance mode for coupling with the QWs is dominated by localized surface plasmon (LSP). When emission polarization is parallel with Al-grating ridges, the coupled SP resonance mode may mix LSP and SP polariton. In this polarization, LSP can be excited because of the width fluctuation of a grating ridge. When the excitation laser polarization is perpendicular to Al-grating ridges, the strong LSP resonance at the excitation laser wavelength leads to stronger excitation and hence higher IQE levels. |
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