Tunneling Intensity Enhancement of Resonant Tunneling Effects Caused by Surface Plasmon Excitations |
| |
Authors: | Peng-Hsiao Lee Yung-Chiang Lan |
| |
Institution: | (1) Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China; |
| |
Abstract: | This study investigates whether the resonant tunneling intensity of one groove of a metal film with periodic grooves on both
surfaces can be enhanced by adjusting the relative permittivity of adjacent grooves of the emitting plane. As the relative
permittivity of the side grooves of the emitting plane increases, the emission intensity of the center groove first increases
but eventually saturates. This property is mainly attributable to concentration of incident intensity in the center groove
of the incident plane. Larger numbers of lumped grooves or larger distances between two adjacent grooves increases the intensity
of light entering the system, which ultimately increases the intensity of emitted light. This enhanced emission intensity
achieved by resonant tunneling effects has potential applications in future plasmonic transistor designs. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|