Fracto‐mechanoluminescence induced by impulsive deformation of II–VI semiconductors

When II–VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value I_m at a time t_m, at which the fracture is completed. After t_m, the ML intensity decreases with time, I_m increase linearly with the impact velocity v₀ and I_T initially increase linearly with v₀ and then it attains a saturation value for a higher value of v₀. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, η_o; however, for the ML excitation, there is an additional factor, r_t dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron–hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time t_m corresponding to the ML intensity versus time curve, the ML intensity I_m corresponding to the peak of ML intensity versus time curve, the total fracto‐mechanoluminescence (FML) intensity I_T, and fast and slow decay of FML intensity of II–VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure. Copyright © 2015 John Wiley & Sons, Ltd.