首页 | 本学科首页   官方微博 | 高级检索  
     


A Theoretical Study on the Influence of Carrier Generation on Drain-Source Current of Graphene Nanoscroll Transistors
Authors:Amiri  I. S.  Mohammadi  Hossein  Yupapin  P.
Affiliation:1.Computational Optics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam
;2.Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam
;3.Department of Electrical Engineering, Faculty of Engineering, Sarvestan Branch, Islamic Azad University, Sarvestan, Iran
;
Abstract:Plasmonics - A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method,...
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号