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Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
Authors:Paolo Gondoni  Matteo Ghidelli  Fabio Di Fonzo  Andrea Li Bassi  Carlo S. Casari
Affiliation:Department of Energy and NEMAS - Center for NanoEngineered Materials and Surfaces, Politecnico di Milano;Center for Nano Science and Technology, Instituto Italiano di Tecnologia
Abstract:Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (>80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.
Keywords:Materials Science   Issue 72   Physics   Nanotechnology   Nanoengineering   Oxides   thin films   thin film theory   deposition and growth   Pulsed laser Deposition (PLD)   Transparent conducting oxides (TCO)   Hierarchically organized Nanostructured oxides   Al doped ZnO (AZO) films   enhanced light scattering capability   gases   deposition   nanoporus   nanoparticles   Van der Pauw   scanning electron microscopy   SEM
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