大兴安岭的黄梅属地衣(英文)

本文报导了分布在大兴安岭的10种黄梅属(Xanthoparmelia)地衣,很多文献曾报导过中国的菊叶黄梅(X.conspersa),但是魏江春(1983)根据形态及化学两方面研究的结果指出,文献中的菊叶黄梅实际上分别是暗腹黄梅(X.tinctina)和淡腹黄梅(X.mexicana)。本文作者在大兴安岭北部釆到了真正的菊叶黄梅。本文还包括5个中国新记录种,它们是贴生黄梅(X.hypopsila),线形黄梅(X.lineola),新墨西哥黄梅(X.novomexicana),黑黄梅(X.tasmanica)和离心黄梅(X.centrifuga)。     

大兴安岭的黄梅属地衣

本文报导了分布在大兴安岭的10种黄梅属(Xanthoparmelia)地衣,很多文献曾报导过中国的菊叶黄梅(X.conspersa),但是魏江春(1983)根据形态及化学两方面研究的结果指出,文献中的菊叶黄梅实际上分别是暗腹黄梅(X.tinctina)和淡腹黄梅(X.mexicana)。本文作者在大兴安岭北部釆到了真正的菊叶黄梅。本文还包括5个中国新记录种,它们是贴生黄梅(X.hypopsila),线形黄梅(X.lineola),新墨西哥黄梅(X.novomexicana),黑黄梅(X.tasmanica)和离心黄梅(X.centrifuga)。     

Structural Aspects of the Lichen-Rock Interface Using Back-scattered Electron Imaging

The profound knowledge of the structural and chemical characteristics of the interface between lichen thallus and rock, seems to be indispensable for the process of understanding the lichen symbiosis as well as the significance of the weathering action of lichens. One of the most promising techniques to be used in this investigation is the Scanning Electron Microscopy (SEM) in the back-scattered electron (BSE) emission mode. In the present work thalli of Parmelia conspersa, Aspicilia intermutans and Lecidea auriculata growing in granitic rock were examined by SEM in BSE mode with (Energy Dispersive Spectroscopy) EDS. In the case of the foliose thalli the observation of the interface permits detection of the rhizine/hyphae adherence and determination of the origin of the minerals which adhere to the rhizine/hyphae. In the case of the crustose thalli BSE permits investigation within the ultrastructure of the crustose thallus and crustose lichen-rock contact zone and also allows observations of the penetration and filling of the fissures and cracks of the underlying rock by components of the thallus and other living organisms. The BSE images could contribute to a better knowledge of the cytological state of the rock-inhabiting organisms and also to the understanding of the action of the chemical treatments used in the removal of lichen from building materials.