In-vivo dose measurements with MOSFET dosimeters during MV portal imaging

BackgroundThe purpose of this study was to investigate the feasibility of MOSFET dosimeter in measuring eye dose during 2D MV portal imaging for setup verification in radiotherapy.Materials and methodsThe in-vivo dose measurements were performed by placing the dosimeters over the eyes of 30 brain patients during the acquisition of portal images in linear accelerator by delivering 1 MU with the field sizes of 10 × 10 cm² and 15 × 15 cm².ResultsThe mean doses received by the left and right eyes of 10 out of 30 patients when both eyes were completely inside the anterior portal field were found to be 2.56 ± 0.2 cGy and 2.75 ± 0.2, respectively. Similarly, for next 10 patients out of the same 30 patients the mean doses to left and right eyes when both eyes were completely out of the anterior portal fields were found to be 0.13 ± 0.02 cGy and 0.17 ± 0.02 cGy, respectively. The mean doses to ipsilateral and contralateral eye for the last 10 patients when one eye was inside the anterior portal field were found to be 3.28 ± 0.2 cGy and 0.36 ± 0.1 cGy, respectively.ConclusionThe promising results obtained during 2D MV portal imaging using MOSFET have shown that this dosimeter is well suitable for assessing low doses during imaging thereby enabling to optimize the imaging procedure using the dosimetric data obtained. In addition, the documentation of the dose received by the patient during imaging procedure is possible with the help of an in-built software in conjunction with the MOSFET reader module.     

Direct protein detection with a nano-interdigitated array gate MOSFET

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.     

MOSFET dose measurements for proton SOBP beam

PurposeThe aim of this work was to develop a computational scheme for the correction of the LET dependence on the MOSFET response in water phantom dose measurements for a spread-out Bragg peak (SOBP) proton beam.MethodsThe LET dependence of MOSFET was attributed to the stopping power ratio of SiO₂ to H₂O and to the fractional hole yield in the SiO₂ layer. Using literature values for the stopping powers of the continuous slowing down approximation and measured fractional hole yields vs. electric field and LET, formulas were derived for the computation of a dose-weighted correction factor of a SOBP beam.ResultsDose-weighted correction factors were computed for a clinical 190-MeV proton SOBP beam in a high-density polyethylene phantom. By applying correction factors to the SOBP beam, which consisted of weighted monoenergetic Bragg peaks, the MOSFET outputs were predicted and agreed well with the measured MOSFET responses.ConclusionBy applying LET dependent correction factors to MOSFET data, quality assurance of dose verification based on MOSFET measurements becomes possible for proton therapy.     

In vivo skin dose measurement using MOSkin detectors in tangential breast radiotherapy

The purpose of this study is to measure patient skin dose in tangential breast radiotherapy. Treatment planning dose calculation algorithm such as Pencil Beam Convolution (PBC) and in vivo dosimetry techniques such as radiochromic film can be used to accurately monitor radiation doses at tissue depths, but they are inaccurate for skin dose measurement. A MOSFET-based (MOSkin) detector was used to measure skin dose in this study. Tangential breast radiotherapies (“bolus” and “no bolus”) were simulated on an anthropomorphic phantom and the skin doses were measured. Skin doses were also measured in 13 patients undergoing each of the techniques. In the patient study, the EBT2 measurements and PBC calculation tended to over-estimate the skin dose compared with the MOSkin detector (p < 0.05) in the “no bolus radiotherapy”. No significant differences were observed in the “bolus radiotherapy” (p > 0.05). The results from patients were similar to that of the phantom study. This shows that the EBT2 measurement and PBC calculation, while able to predict accurate doses at tissue depths, are inaccurate in predicting doses at build-up regions. The clinical application of the MOSkin detectors showed that the average total skin doses received by patients were 1662 ± 129 cGy (medial) and 1893 ± 199 cGy (lateral) during “no bolus radiotherapy”. The average total skin doses were 4030 ± 72 cGy (medial) and 4004 ± 91 cGy (lateral) for “bolus radiotherapy”. In some cases, patient skin doses were shown to exceed the dose toxicity level for skin erythema. Hence, a suitable device for in vivo dosimetry is necessary to accurately determine skin dose.     

2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

In this paper, a novel device structure (Si_1 ? x Ge _x /Si/Si_1 ? x Ge _x hetero-structure), which is named as “center-channel (CC) double-gate (DG) MOSFET,” is proposed. Device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which produces a self-consistent solution of Poisson–Schrödinger equations and the current continuity equation. The CC operation of CC-NMOS is confirmed from the electron density distribution and the band lineups as well as the lowest energy wave function. Current–voltage characteristics including the trans-conductance (G _m) of CC-MOSFET are carefully compared with those of the conventional DG-NMOS to evaluate the distinct feature of the proposed FET structure. Our simulation revealed that the proposed FET demonstrates the enhanced (about (～1.6 × ) current drive and 60% G _m. Finally, the short-channel effects of CC and DG MOSFET, both of which demonstrate excellent sub-threshold behaviors and open the possibility of device scaling down to sub-20 nm.     

Dose distribution homogeneity in two TBI techniques—Analysis of 208 irradiated patients conducted in Stanislaw Leszczynski Memorial Hospital,Katowice

BackgroundTo analyze and compare dose distribution homogeneity in selected points (especially in the chest wall region) for patients irradiated with two different TBI techniques to achieve a uniform total dose (excluding lungs area) specified in the range of 11.4–14.0 Gy.Material and methodsFrom August 2000 to December 2009, a group of 158 patients was treated by the use of 15 MV photon irradiation consisting of six fractions: four opposed lateral and two anterior–posterior/posterior–anterior (AP/PA). Patients were irradiated with the fraction dose of 2 Gy twice a day for 3 consecutive days. The prescribed dose to PC point (specified at intersection of the beam axis with the mid-plane of the patient irradiated laterally) was 12 Gy. Since January 2010 until closing the study, another group of 50 patients was treated according to a modified protocol. The treatment was carried out in six lateral fractions only, twice a day, for three following days and a lateral lung shield was used for a part of total irradiation time. The measurements of doses in 20 selected points of patient's body were carried out by means of MOSFET detectors.ResultsThe modified TBI technique allows to achieve an expected homogenous dose in the points of interest similar to that obtained by using the initial protocol. The calculated and measured in vivo doses met the specified range of 11.4–14 Gy for both applied TBI protocols.ConclusionsOur results indicate that for all patients the homogenous dose distribution in the specified range was achieved.     

“Edge-on” MOSkin detector for stereotactic beam measurement and verification

Dosimetry in small radiation field is challenging and complicated because of dose volume averaging and beam perturbations in a detector. We evaluated the suitability of the “Edge-on” MOSkin (MOSFET) detector in small radiation field measurement. We also tested the feasibility for dosimetric verification in stereotactic radiosurgery (SRS) and stereotactic radiotherapy (SRT). “Edge-on” MOSkin detector was calibrated and the reproducibility and linearity were determined. Lateral dose profiles and output factors were measured using the “Edge-on” MOSkin detector, ionization chamber, SRS diode and EBT2 film. Dosimetric verification was carried out on two SRS and five SRT plans. In dose profile measurements, the “Edge-on” MOSkin measurements concurred with EBT2 film measurements. It showed full width at half maximum of the dose profile with average difference of 0.11 mm and penumbral width with difference of ±0.2 mm for all SRS cones as compared to EBT2 film measurement. For output factor measurements, a 1.1% difference was observed between the “Edge-on” MOSkin detector and EBT2 film for 4 mm SRS cone. The “Edge-on” MOSkin detector provided reproducible measurements for dose verification in real-time. The measured doses concurred with the calculated dose for SRS (within 1%) and SRT (within 3%). A set of output correction factors for the “Edge-on” MOSkin detector for small radiation fields were derived from EBT2 film measurement and presented. This study showed that the “Edge-on” MOSkin detector is a suitable tool for dose verification in small radiation field.     

Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects

A quantum-mechanical compact model of the threshold voltage (V _T) for quantum nanowire MOSFETs has been developed. This approach is based on analytical solutions for the decoupled 2D Schrödinger and 1D Poisson equations solved in the silicon channel. A quantum correction based on the perturbation theory has been also introduced to improve the model accuracy. Finally, the validity of the model has been verified by comparison with data obtained with a 2D/3D Poisson-Schrödinger drift-diffusion simulation code.     

Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

A compact model for the threshold voltage in Double-Gate (DG) MOSFET is developed. The model takes into account short-channel effects, carrier quantization and temperature dependence of the threshold voltage. We assume a parabolic variation of the potential with the vertical position in the silicon film at threshold. An analytical expression for the surface potential dependence as a function of bias and position in the silicon film is also developed and used for the inversion charge calculation. The model has been fully validated by 2D quantum numerical simulation and is used to predict the threshold voltage roll-off in DG MOSFET with very short channel lengths and thin films. The comparison with measured threshold voltages shows that the model reproduces with an excellent accuracy the experimental data.