Engineering the Optical and Dielectric Properties of the Ga2S3/In/Ga2S3 Nanosandwiches via Indium Layer Thickness

Plasmonics - In this study, the effect of the nanosandwiched indium slab thickness (20–200 nm) on the performance of the Ga2S3/In/Ga2S3 interfaces is explored by means of X-ray...     

Plasmon Interactions at the (Ag,Al)/InSe Thin-Film Interfaces Designed for Dual Terahertz/Gigahertz Applications

In this article, we investigate the plasmon-dielectric spectral interaction in the Ag/InSe and Al/InSe thin-film interfaces. The mechanism is explored by means of optical absorbance and reflectance at terahertz frequencies and by the impedance spectroscopy at gigahertz frequencies. It was observed that the interfacing of the InSe with Ag and Al metals with a film thickness of 250 nm causes an energy band gap shift that suits the production of thin-film optoelectronic devices. The reflectance and dielectric constant and optical conductivity spectral analysis of these devices displayed the properties of wireless band stop filters at 390 THz. The physical parameters which are computed from the conductivity spectra revealed higher mobility of charge carriers at the Al/InSe interface over that of Ag/InSe. The respective electron-bounded plasmon frequencies are found to be 2.61 and 2.13 GHz. On the other hand, the impedance spectral analysis displayed a microwave resonator feature with series resonance peak position at 1.68 GHz for the Al/InSe/Ag interface. In addition, the temperature-dependent impedance spectra, which were recorded in the temperature range of 300–420 K, revealed no significant effect of temperature on the wave trapping properties of the Al/InSe/Ag interface. The sensitivity of the interfaces to terahertz and gigahertz frequencies nominates it as laser light/microwave traps, which are used in fibers and communications.

     

Dielectric Dispersion in Ga<Subscript>2</Subscript>S<Subscript>3</Subscript> Thin Films

In this work, the structural, compositional, optical, and dielectric properties of Ga₂S₃ thin films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, and ultraviolet—visible light spectrophotometry. The Ga₂S₃ thin films which exhibited amorphous nature in its as grown form are observed to be generally composed of 40.7 % Ga and 59.3 % S atomic content. The direct allowed transitions optical energy bandgap is found to be 2.96 eV. On the other hand, the modeling of the dielectric spectra in the frequency range of 270–1,000 THz, using the modified Drude-Lorentz model for electron-plasmon interactions revealed the electrons scattering time as 1.8 (fs), the electron bounded plasma frequency as ~0.76–0.94 (GHz) and the reduced resonant frequency as 2.20–4.60 ×10¹⁵ (Hz) in the range of 270–753 THz. The corresponding drift mobility of electrons to the terahertz oscillating incident electric field is found to be 7.91 (cm ²/Vs). The values are promising as they nominate the Ga₂S₃ thin films as effective candidates in thin-film transistor and gas sensing technologies.