排序方式: 共有1条查询结果,搜索用时 0 毫秒
1
1.
The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained
glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current
flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2. 相似文献
1