首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1篇
  免费   0篇
  2011年   1篇
排序方式: 共有1条查询结果,搜索用时 0 毫秒
1
1.
The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号