A novel silicon patch‐clamp chip permits high‐fidelity recording of ion channel activity from functionally defined neurons

We report on a simple and high‐yield manufacturing process for silicon planar patch‐clamp chips, which allow low capacitance and series resistance from individually identified cultured neurons. Apertures are etched in a high‐quality silicon nitride film on a silicon wafer; wells are opened on the backside of the wafer by wet etching and passivated by a thick deposited silicon dioxide film to reduce the capacitance of the chip and to facilitate the formation of a high‐impedance cell to aperture seal. The chip surface is suitable for culture of neurons over a small orifice in the substrate with minimal leak current. Collectively, these features enable high‐fidelity electrophysiological recording of transmembrane currents resulting from ion channel activity in cultured neurons. Using cultured Lymnaea neurons we demonstrate whole‐cell current recordings obtained from a voltage‐clamp stimulation protocol, and in current‐clamp mode we report action potentials stimulated by membrane depolarization steps. Despite the relatively large size of these neurons, good temporal and spatial control of cell membrane voltage was evident. To our knowledge this is the first report of recording of ion channel activity and action potentials from neurons cultured directly on a planar patch‐clamp chip. This interrogation platform has enormous potential as a novel tool to readily provide high‐information content during pharmaceutical assays to investigate in vitro models of disease, as well as neuronal physiology and synaptic plasticity. Biotechnol. Bioeng. 2010;107:593–600. © 2010 Wiley Periodicals, Inc.     

SILICON DEPOSITION DURING THE CELL CYCLE OF THALASSIOSIRA WEISSFLOGII (BACILLARIOPHYCEAE) DETERMINED USING DUAL RHODAMINE 123 AND PROPIDIUM IODIDE STAINING1

The relatively non-toxic dye, rhodamine 123 (R123), was incorporated into the frustule of Thalassiosira weissflogii Grun. clone ACTIN in direct proportion to biogenic silica (BSi). R123 was used together with the DNA stain propidium iodide to track and quantify Si deposition during the cell cycle of T. weissflogii using flow cytometry. Silicon deposition was not continuous through the cell cycle. Deposition of the valves occurred during M phase. The hypocingulum was largely deposited during G1 with some suggestion of minor girdle band deposition during G2. Silicon deposition did not occur during S phase. Assuming that a complete frustule consists of an epivalve, epicingulum, hypocingulum, and hypovalve, then 40% of cellular BSi was contained within the cingulum of T. weissflogii with 60% present in the valves. These percentages correspond to 0.38 pmol Si in the two cingula and 0.57 pmol Si in the valves. Temporal differences in the timing of silicic acid uptake and deposition during the cell cycle of T. weissflogii suggested that deposition of both the new valves and the cingulum is supported by an internal pool of dissolved Si acquired during G2.     

Preparation and Evaluation of Self-nanoemulsifying Tablets of Carvedilol

The purpose of this study was to combine the advantages of self-nanoemulsifying drug delivery systems and tablets as a conventional dosage form emphasizing the excipients’ effect on the development of a new dosage form. Systems composed of HCO-40, Transcutol® HP, and medium-chain triglyceride were prepared. Essential properties of the prepared systems regarding carvedilol solubility, a model drug, and self-emulsification time were determined. In order to optimize self-nanoemulsifying drug delivery systems (SNEDDS), formulation dispersion–drug precipitation test was performed in the absence and presence of cellulosic polymers. Furthermore, SNEDDS was loaded onto liquisolid powders. P-glycoprotein (P-gp) activity of the selected SNEDDS was tested using HCT-116 cells. Carvedilol showed acceptable solubility in the selected excipients. It also demonstrated improvement in the stability upon dilution with aqueous media in the presence of cellulosic polymers. Use of granulated silicon dioxide improved the physical properties of liquisolid powders containing SNEDDS. It improved the compressibility of the selected powders and the tested SNEDDS showed marked P-gp inhibition activity. Prepared self-nanoemulsifying tablet produced acceptable properties of immediate-release dosage forms and expected to increase the bioavailability of carvedilol.     

Observation of Electrochemically Driven Elemental Segregation in a Si Alloy Thin‐Film Anode and its Effects on Cyclic Stability for Li‐Ion Batteries

The results of employing (Ti, Fe)‐alloyed Si thin‐film anode for Li‐ion batteries are reported. The material demonstrates an impressive cyclic stability with stable operation for more than 500 cycles at a capacity higher than 1400 mAh g^?1. Materials characterization using scanning electron microscopy and transmission electron microscopy illuminates an intriguing materials process behind the performance: ripple‐like pattern formation via electrochemically driven segregation of the inactive elements (Ti and Fe). The ripple structure plays a buffer role by suppressing loss of the active material upon further cycling, allowing the anode to gradually transform into an array of microbumps. The morphological evolution helps the anode endure long cycles (even up to 1000 cycles) without catastrophic failure as the bumps shrank slowly and steadily, consistent with the electrochemical data.     

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Measurements of the heat capacity and superfluid fraction of confined ⁴He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments³, bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data.Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned² in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water⁴. The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.     

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN _x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaN_x interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaN_x contact, which significantly improves the fill factor and the open circuit voltage (V_oc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.