施硅增强水稻对纹枯病的抗性

采用水培的方法,从细胞学和生理生化方面研究了硅增强水稻对纹枯病的抗性作用。结果表明：加硅处理的水稻叶片硅化细胞和叶片表面的硅元素含量均显著高于缺硅处理（对照）：接种纹枯病菌后,加硅处理的MDA含量总体上低于缺硅处理,峰值尤为显著;加硅处理的SOD活性始终高于缺硅处理,接种后第4天加硅处理SOD活性较低时,其POD活性较高,而缺硅处理的POD活性较低,表明硅增强了SOD和POD之间的协调性;接种后硅对CAT和PAL活性没有产生明显影响,但降低了PP0活性;加硅能显著降低水稻植株的纹枯病病情指数。     

喷施硅对蒙古黄芪抗氧化酶活性以及产量和品质的影响北大核心CSCD

以蒙古黄芪为试验材料,设置大田随机区组试验,研究苗期、开花期和根茎伸长期叶面喷施不同浓度硅(500、1000、2000和4000 mg/L)对蒙古黄芪生长发育、抗氧化酶活性、药材产量和品质的影响,并检测施硅对黄芪白粉病、根腐病的防治效果,以揭示硅对增强黄芪抗病性、提升品质和产量的影响机理,为生产中蒙古黄芪的高效栽培提供理论依据。结果表明:(1)在不同生育时期,喷施不同浓度硅能增加蒙古黄芪株高、茎粗、株幅和叶绿素含量,促进蒙古黄芪生长,并以2000 mg/L硅处理效果较佳。(2)不同生育时期喷施硅能提高蒙古黄芪叶片SOD、CAT、POD和APX等抗氧化酶活性,降低MDA含量,以开花期、根茎伸长期2000 mg/L硅处理较佳。(3)施硅能有效降低蒙古黄芪白粉病、根腐病的病情指数,当施硅浓度为2000 mg/L时防效均达到最高,并分别达到47.05%和39.08%。(4)施硅处理能有效提高蒙古黄芪单株干、鲜生物量、产量以及可溶性浸出物和黄芪甲苷含量等品质指标,并在2000 mg/L硅浓度处理下均达到最佳水平,此时可溶性浸出物和黄芪甲苷含量分别比对照显著提高了16.48%和31.96%。研究发现,叶面喷施适宜浓度硅可显著增强蒙古黄芪对白粉病、根腐病的抗性,促进植株生长,进而显著提高药材产量,改善药材品质,并以硅浓度为2000 mg/L时效果最佳。     

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Measurements of the heat capacity and superfluid fraction of confined ⁴He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments³, bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data.Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned² in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water⁴. The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.     

Optical Detection of E. coli Bacteria by Mesoporous Silicon Biosensors

A label-free optical biosensor based on a nanostructured porous Si is designed for rapid capture and detection of Escherichia coli K12 bacteria, as a model microorganism. The biosensor relies on direct binding of the target bacteria cells onto its surface, while no pretreatment (e.g. by cell lysis) of the studied sample is required. A mesoporous Si thin film is used as the optical transducer element of the biosensor. Under white light illumination, the porous layer displays well-resolved Fabry-Pérot fringe patterns in its reflectivity spectrum. Applying a fast Fourier transform (FFT) to reflectivity data results in a single peak. Changes in the intensity of the FFT peak are monitored. Thus, target bacteria capture onto the biosensor surface, through antibody-antigen interactions, induces measurable changes in the intensity of the FFT peaks, allowing for a ''real time'' observation of bacteria attachment.The mesoporous Si film, fabricated by an electrochemical anodization process, is conjugated with monoclonal antibodies, specific to the target bacteria. The immobilization, immunoactivity and specificity of the antibodies are confirmed by fluorescent labeling experiments. Once the biosensor is exposed to the target bacteria, the cells are directly captured onto the antibody-modified porous Si surface. These specific capturing events result in intensity changes in the thin-film optical interference spectrum of the biosensor. We demonstrate that these biosensors can detect relatively low bacteria concentrations (detection limit of 10⁴ cells/ml) in less than an hour.     

The effect of silicon on the growth of Prosopis juliflora growing in saline soil

A decrease in whole plant dry weight was observed when Prosopis juliflora (Swartz) DC. was treated with saline irrigation water for 24 days which was partially alleviated by the addition of 0.47 mM SiO₂ to the irrigation water. The plants treated with high salinity and SiO₂ showed a greater distribution of dry material to the leaves at the expense of the stems and roots compared to control plants. The possible use of SiO₂ to grow plants may be beneficial in areas of high soil salinities.     

Economic and Social Impact Assessment of China's Multi‐Crystalline Silicon Photovoltaic Modules Production

It is important to have insights into the potential sustainability impacts as early as possible in the development of technology. Solar photovoltaic (PV) technologies provide significant environmental, economic, and social benefits in comparison to the conventional energy sources. Because most previous studies of multi‐crystalline silicon (Multi‐Si) PV modules discuss the environmental impacts, this study quantitatively assesses the economic and social impacts of China's multi‐crystalline silicon (mc‐Si) PV modules production stages. The economic analysis is uses life cycle cost analysis, and the social impact analysis is carried out by applying the social index evaluation method. The economic analysis results demonstrate that the main cost of mc‐Si PV modules production in China lies in raw materials and labor and the production of Multi‐Si PV cells have the highest cost among the five manufacturing processes involved in Multi‐Si PV. The result of the social impact analysis reveal that the employment contribution index, S₁₁, is 0.72, indicating that Multi‐Si PV modules production in China has a prominent contribution to employment in comparison with other industries; the labor civilization degree, S₁₂ (i.e., the proportion of mental labor involved in a given job), and labor income contribution index, S₁₃, are both approximately 0.6, indicating that Multi‐Si PV modules production has a less‐significant labor level and income contribution in comparison with other industries; the production capacity contribution index, S₁₄, is merely 0.183, indicating that production of Multi‐Si PV modules does not contribute significantly to the gross domestic product (GDP). Based on the results of these evaluations, some recommendations to improve the economic and social impact of Multi‐Si PV modules production in China are presented, including support for research on polycrystalline silicon production for the purpose of reducing the raw material cost, as well as upgrading manufacturing facilities and implementing the corresponding production training in order to promote the labor civilization degree.     

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN _x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaN_x interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaN_x contact, which significantly improves the fill factor and the open circuit voltage (V_oc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.     

Stress‐Relieved Nanowires by Silicon Substitution for High‐Capacity and Stable Lithium Storage

Silicon is promising as a high energy anode for next‐generation lithium‐ion batteries. However, severe capacity fading upon cycling associated with huge volume change is still an obstacle for silicon toward practical applications. Herein, the authors report that Si‐substituted Zn₂(GeO₄)_0.8(SiO₄)_0.2 nanowires can effectively suppress volume expansion effect, exhibiting high specific capacity (1274 mA h g^?1 at 0.2 A g^?1 after 700 cycles) and ultralong cycling stability (2000 cycles at 5 A g^?1 with a capacity decay rate of 0.008% per cycle), which represents outstanding comprehensive performance. The superior performance is ascribed to the substitution of Si atom that imparts to the nanowires not only high reactivity and reversibility, but also the unique stress‐relieved property upon lithiation which is further confirmed by detailed density‐functional theory computation. This work provides a new guideline for designing high‐performance Si‐based materials toward practical energy storage applications.