Light‐Induced Activation of Adaptive Junction for Efficient Solar‐Driven Oxygen Evolution: In Situ Unraveling the Interfacial Metal–Silicon Junction

The integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high‐efficiency solar‐induced water splitting. However, once combined with a photoanode, detailed discussions of the light‐induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X‐ray scattering/diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal–semiconductor (M–S) junction between a state‐of‐the‐art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M–S junction through the light‐induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm^?2) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes.     

3D Porous Pyramid Heterostructure Array Realizing Efficient Photo‐Electrochemical Performance

Direct photo‐electrochemical (PEC) water splitting is of great practical interest for developing a sustainable energy systems, but remains a big challenge owing to sluggish charge separation, low efficiency, and poor stability. Herein, a 3D porous In₂O₃/In₂S₃ pyramid heterostructure array on a fluorine‐doped tin oxide substrate is fabricated by an ion exchange–induced synthesis strategy. Based on the synergistic structural and electronic modulations from density functional theory calculations and experimental observations, 3D porous In₂O₃/In₂S₃ photoanode by the protective layer delivers a low onset potential of ≈0.02 V versus reversible hydrogen electrode (RHE), the highest photocurrent density of 8.2 mA cm^?2 at 1.23 V versus RHE among all the In₂S₃ photoanodes reported to date, an incident photon‐to‐current efficiency of 76% at 400 nm, and high stability over 20 h for PEC water splitting are reported. This work provides an alternative promising prototype for the design and construction of novel heterostructures in robust PEC water splitting applications.     

3D‐Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research

Modulation of broadband light trapping through assembly of 3D structures and modification with narrow band‐gap semiconductors provide an effective way to improve the photoelectrochemical (PEC) performance. Here, 3D‐branched ZnO nanowire arrays (NWAs) modified with cadmium sulfide (CdS) nanoparticles are designed and synthesized via solution chemical routes. The 3D‐branched ZnO NWA–CdS nanoparticle photoanodes show an excellent PEC performance in UV and visible region and the maximum photo‐to‐hydrogen conversion efficiency reaches to 3.1%. The high performance of 3D‐branched ZnO NWA–CdS composites is mainly attributed to the excellent carrier collection capability and high light‐trapping ability of 3D‐branched ZnO NWAs as well as the excellent photocatalytic activity of CdS nanoparticles in the visible region. In addition, the photocorrosion mechanism of 3D‐branched ZnO NWA–CdS photoanodes is systematically investigated, and a protective TiO₂ layer is deposited onto the photoanodes to elevate the PEC stability. The results benefit a deeper understanding of the role of 3D‐branched structures decorated with narrow band‐gap semiconductors in solar water splitting.     

New Insights into Defect‐Mediated Heterostructures for Photoelectrochemical Water Splitting

Understanding the interfacial electronic structures of heterojunctions, a challenging undertaking, is extremely important to the design of photoelectrodes for efficient water splitting. The heterostructured interfaces in terms of crystal defects at the atomic‐level exemplified by TiO₂/BiVO₄ are studied. Results from both experimental observations and theoretical calculations clearly confirm the spontaneous formation of defective interfaces in the heterostructures. TiO₂/BiVO₄ junction with engineered interfacial defects can efficiently increase the carrier density and extend the lifetime of electrons. The inherent phenomenon of defective electronic structures in different heterostructures creates a significant impact on their photoelectrochemical performance. The synergetic effect between defect‐mediated mechanism and organic quantum dots sensitization yields significantly increased photoconversion efficiency, which is even superior to that of common metal sulfide sensitized ones. This result demonstrates an approach worthy for the design and fabrication of defect‐mediated heterostructures for water splitting, without utilizing harmful metal sulfides. Moreover, new insights into the influence of intrinsic defects on the interfacial charge transfer process between two different semiconductors for energy‐related applications have also been provided.     

Binary Indium–Zinc Oxide Photoanodes for Efficient Dye‐Sensitized Solar Cells

The benefits of incorporating binary metal‐oxide electrodes en route toward efficient dye‐sensitized solar cells (DSSCs) have recently emerged. The current work aims at realizing efficient indium‐doped zinc oxide based DSSCs by means of enhancing charge transport processes and reducing recombination rates. Electrochemical impedance spectroscopic assays corroborate that low amounts of indium reduce charge transport resistances and increase electron recombination resistances. The latter are in concert with a remarkable enhancement of the charge collection efficiency from 33% to 83% for devices with ZnO and In₁₅Zn₈₅O photoanodes, respectively. Going beyond 15 mol% of indium, an effective electron trapping increases the charge transport resistance and, in turn, dramatically reduces charge collection efficiency. Upon implementing In₁₅Zn₈₅O into an electron cascade photoanode architecture featuring an In₁₅Zn₈₅O bottom layer and a ZnO top layer, a device efficiency of 5.77% and a significantly high current density of 20.4 mA cm^?2 in binary ZnO DSSCs are achieved.