Efficient and Stable TiO2:Pt–Cu(In,Ga)Se2 Composite Photoelectrodes for Visible Light Driven Hydrogen Evolution

Novel thin film composite photocathodes based on device‐grade Cu(In,Ga)Se₂ chalcopyrite thin film absorbers and transparent conductive oxide Pt‐implemented TiO₂ layers on top are presented for an efficient and stable solar‐driven hydrogen evolution. Thin films of phase‐pure anatase TiO₂ are implemented with varying Pt‐concentrations in order to optimize simultaneously i) conductivity of the films, ii) electrocatalytic activity, and iii) light‐guidance toward the chalcopyrite. Thereby, high incident‐photon‐to‐current‐efficiencies of more than 80% can be achieved over the full visible light range. In acidic electrolyte (pH 0.3), the most efficient Pt‐implemented TiO₂–Cu(In,Ga)Se₂ composite electrodes reveal i) photocurrent densities up to 38 mA cm^?2 in the saturation region (?0.4 V RHE, reversible hydrogen electrode), ii) 15 mA cm^?2 at the thermodynamic potential for H₂‐evolution (0 V RHE), and iii) an anodic onset potential shift for the hydrogen evolution (+0.23 V RHE). It is shown that the gradual increase of the Pt‐concentration within the TiO₂ layers passes through an efficiency‐ and stability‐maximum of the device (5 vol% of Pt precursor solution). At this maximum, optimized light‐incoupling into the device‐grade chalcopyrite light‐absorber as well as electron conductance properties within the surface layer are achieved while no degradation are observed over more than 24 h of operation.     

CSi2Ga2: a neutral planar tetracoordinate carbon (ptC) building block

Ever being a large curiosity, the “anti-van’t Hoff/Le Bel” realm that is associated with tetracoordinate or hypercoordinate planar centers has made rapid progress. In particular, it has been disclosed that silicon and gallium can be embedded in various planar species. However, to our best knowledge, assembly of silicon— and gallium-embedded planar units has never been reported, though such assembled species might be used as potential nanoscale devices. Here we report the first attempt on how to design assembled molecular compounds featuring silicon— and gallium-embedded planar tetracoordinate carbon (ptC) units. Taking the special silicon- and gallium-embedded ptC unit CSi₂Ga₂ as an example, we performed density functional calculations on a series of model compounds [DM(CSi₂Ga₂)]^q+ as well as the saturated compounds (Cl⁻)_q[CpM(CSi₂Ga₂)]^q+ (D = CSi₂Ga₂, Cp⁻(C₅H₅ ⁻); M = Li, Na, K, Be, Mg, Ca) and the more extended sandwich-like species. For the six metals, CSi₂Ga₂ can only be assembled in the “hetero-decked sandwich” scheme (e.g., [CpM(CSi₂Ga₂)]^q+) so as to avoid cluster fusion. Interestingly, among all the designed sandwich species, CSi₂Ga₂ generally prefers to interact with the partner deck at the corner (Ga atoms) or face (CSi₂Ga₂ planes) sites. Such interaction types serve as an interesting growth pattern that might be applicable to the assembly of Si- and Ga-embedded ptC unit CSi₂Ga₂ into highly extended sandwich-like complexes. Our results for the first time showed that the Si- and Ga-embedded ptC unit CSi₂Ga can act as a new type of building block. The present results are expected to enrich planar tetracoordinate carbon chemistry and metallocenes.     

Characterization and expression of cry4Cb1 and cry30Ga1 from Bacillus thuringiensis strain HS18-1

We characterized a novel Bacillus thuringiensis isolate native to China (HS18-1) that shows a spherical crystal harboring two major proteins of about 70 and 130 kDa, and contains three novel cry genes (cry4Cb1, cry30Ga1, cry54-type). Furthermore, the cry4Cb1 and cry30Ga1 genes were expressed in Escherichia coli BL21 (DE3): pLysS. Insecticidal activity tests showed that the cry4Cb1 protein exhibited larvicidal activity against Aedes aegypti (Diptera) and the cry30Ga1 protein was toxic to both A. aegypti and P. xylostella (Lepidoptera).     

Role of transferrin in metal uptake by human lymphoblasts in vitro

The uptake and binding of 59Fe, 67Ga and 239Pu complexed with citrate of transferrin (Tf) and of 125I-labelled Fe-Tf by human lymphoblasts (WI-L2 cells) have been studied. Uptake kinetics of 59Fe-Tf and [125I]-Tf point to internalization by receptor mediated endocytosis. 67Ga binding and uptake is always less. This may be explained by a lower affinity of Ga-complexes for the cell surface. Factors which influence Fe uptake have a similar effect on Ga. 239Pu uptake and binding, however, are different, especially in that Tf does not stimulate 239Pu uptake and may actually decrease it.     

The reaction mechanism of the Ga(III)Zn(II) derivative of uteroferrin and corresponding biomimetics

Purple acid phosphatase from pig uterine fluid (uteroferrin), a representative of the diverse family of binuclear metallohydrolases, requires a heterovalent Fe(III)Fe(II) center for catalytic activity. The active-site structure and reaction mechanism of this enzyme were probed with a combination of methods including metal ion replacement and biomimetic studies. Specifically, the asymmetric ligand 2-bis{[(2-pyridylmethyl)-aminomethyl]-6-[(2-hydroxybenzyl)(2-pyridylmethyl)]aminomethyl}-4-methylphenol and two symmetric analogues that contain the softer and harder sites of the asymmetric unit were employed to assess the site selectivity of the trivalent and divalent metal ions using (71)Ga NMR, mass spectrometry and X-ray crystallography. An exclusive preference of the harder site of the asymmetric ligand for the trivalent metal ion was observed. Comparison of the reactivities of the biomimetics with Ga(III)Zn(II) and Fe(III)Zn(II) centers indicates a higher turnover for the former, suggesting that the M(III)-bound hydroxide acts as the reaction-initiating nucleophile. Catalytically active Ga(III)Zn(II) and Fe(III)Zn(II) derivatives were also generated in the active site of uteroferrin. As in the case of the biomimetics, the Ga(III) derivative has increased reactivity, and a comparison of the pH dependence of the catalytic parameters of native uteroferrin and its metal ion derivatives supports a flexible mechanistic strategy whereby both the mu-(hydr)oxide and the terminal M(III)-bound hydroxide can act as nucleophiles, depending on the metal ion composition, the geometry of the second coordination sphere and the substrate.     

Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Cd‐free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of In_x(O,S)_y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.     

Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals

Direct sputtering of a single quaternary Cu(In,Ga)Se₂ (CIGS) target without postselenization is a promising approach to fabricating CIGS absorbers. However, the device efficiency of the quaternary‐sputtered CIGS is limited to 10%–11% due to the low and uncontrollable Se supply during the quaternary sputtering process. Here, an enhanced efficiency of 14.1% is reported by directly sputtering from a CIGS target without extra Se supply followed by sequential postdeposition treatments (PDT) of NaF and KF. The effects of different post‐treatments of alkali metals on quaternary‐sputtered CIGS thin films are discussed in detail. A Cu‐depleted surface is not observed in the quaternary‐sputtered CIGS thin films after KF‐PDT, different from the observation in the coevaporated CIGS, in which the Cu‐depleted surface layer induced by KF‐PDT enhances the efficiency. On the other hand, it is found that KF‐PDT reduces Se vacancies more effectively than NaF‐PDT, which could be another electrically benign behavior of KF‐PDT. The effective passivation of Se vacancies after KF‐PDT overcomes the Se‐poor nature of the quaternary sputtering process without postselenization. Therefore, KF‐PDT combined with Na doping, which is known to annihilate In_Cu defects, significantly improves minority carrier lifetime and cell performance.     

"Antibodies raised against beta-adrenergic receptors stimulate adenylate cyclase"

Antibodies raised in mice against β-adrenergic receptors purified from turkey erythrocyte membranes, specifically bind to cells which possess a β-adrenergic receptor and immunoprecipitate radiolabelled purified receptor. These antibodies stimulate the adenylate cyclase activity of the turkey erythrocytes, although they do not compete with the catecholamine hormones for binding to the β-adrenergic receptor. Thus the receptor-antibody interaction, although occuring at another site than the receptor-hormone interaction, may still trigger the enzymatic activity.     

Si‐Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer Layer

In this communication, novel and simplified structure Cu(In,Ga)Se₂ (CIGS) solar cells, which nominally consist of only a CIGS photoabsorber layer sandwiched between back and front contact layers but yet demonstrate high photovoltaic efficiencies, are reported. To realize this accomplishment, Si‐doped CIGS films grown by the three‐stage coevaporation method, B‐doped ZnO transparent conductive oxide front contact layers deposited by chemical vapor deposition, and heat–light soaking treatments are used. Si‐doping of CIGS films is found to modify the film surfaces and grain boundary properties and also affect the alkali metal distribution profiles in CIGS films. These effects are expected to contribute to improvements in buffer‐free CIGS device performance. Heat–light soaking treatments, which are occasionally performed to improve conventional buffer‐based CIGS device performance, are found to be also effective in enhancing buffer‐free CIGS photovoltaic efficiencies. This result suggests that the mechanism behind the beneficial effects of heat–light soaking treatments originates from CIGS bulk issues and is independent of the buffer materials. Consequently, over 16.5% efficiencies, including an independently certified value, are demonstrated from completely buffer‐free CIGS photovoltaic devices.     

Interaction of myelin basic protein, melittin and bovine serum albumin with gangliosides, sulphatide and neutral glycosphingolipids in mixed monolayers

Some parameters that may regulate the miscibility and stability of mixed lipid-protein monolayers at the air-145 mM NaCl interface were studied employing six glycosphingolipids (acidic or neutral), three different types of proteins (soluble, extrinsic or highly amphipathic) and some phospholipids. The results obtained show that the percentage of the total area occupied by the protein at the interface is an important parameter leading to lateral phase separations; the amount and area contribution of the protein accepted in the film before the components become immiscible increase with the complexity of the polar head group of the glycosphingolipids. The interactions occur with progressive reductions of the intermolecular packing as the polar head group of the glycosphingolipid becomes more complex and this is accompanied by more negative values of the excess free energy of mixing. The lipid component seems to be the major responsible for the reduction in mean molecular area.