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PRP4 encodes the only kinase among the spliceosome components. Although it is an essential gene in the fission yeast and other eukaryotic organisms, the Fgprp4 mutant was viable in the wheat scab fungus Fusarium graminearum. Deletion of FgPRP4 did not block intron splicing but affected intron splicing efficiency in over 60% of the F. graminearum genes. The Fgprp4 mutant had severe growth defects and produced spontaneous suppressors that were recovered in growth rate. Suppressor mutations were identified in the PRP6, PRP31, BRR2, and PRP8 orthologs in nine suppressor strains by sequencing analysis with candidate tri-snRNP component genes. The Q86K mutation in FgMSL1 was identified by whole genome sequencing in suppressor mutant S3. Whereas two of the suppressor mutations in FgBrr2 and FgPrp8 were similar to those characterized in their orthologs in yeasts, suppressor mutations in Prp6 and Prp31 orthologs or FgMSL1 have not been reported. Interestingly, four and two suppressor mutations identified in FgPrp6 and FgPrp31, respectively, all are near the conserved Prp4-phosphorylation sites, suggesting that these mutations may have similar effects with phosphorylation by Prp4 kinase. In FgPrp31, the non-sense mutation at R464 resulted in the truncation of the C-terminal 130 aa region that contains all the conserved Prp4-phosphorylation sites. Deletion analysis showed that the N-terminal 310-aa rich in SR residues plays a critical role in the localization and functions of FgPrp4. We also conducted phosphoproteomics analysis with FgPrp4 and identified S289 as the phosphorylation site that is essential for its functions. These results indicated that FgPrp4 is critical for splicing efficiency but not essential for intron splicing, and FgPrp4 may regulate pre-mRNA splicing by phosphorylation of other components of the tri-snRNP although itself may be activated by phosphorylation at S289.  相似文献   
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In the spring of 2007, a serious disease on amaranth was noticed in several farms in the major amaranth production area in central Taiwan. Abundant oospores were found in the disease tissues. A species of Phytophthora was consistently isolated from disease tissues. The organism formed abundant oospores with smooth walls and with amphigynous antheridia in single culture. Sporangia were partially deciduous with short‐ to medium‐length pedicels. Morphological characteristics of this organism did not match any reported Phytophthora species, and the organism was named Phytophthora amaranthi. Pathogenicity tests and molecular characterization confirmed the identity of the organism as a new pathogen of amaranth and a new species of Phytophthora.  相似文献   
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种子耐储藏特性是粮食作物的特殊农艺性状之一, 耐储藏性能对种子生产和种质资源保存有重要意义。以粳型超级稻龙稻5 (LD5)和高产籼稻中优早8 (ZYZ8)杂交衍生的重组自交系(RILs)群体(共180个株系)为实验材料, 自然高温高湿条件下放置1年、2年和3年后, 对不同储藏时段种子发芽率进行比较, 并利用223个分子标记的遗传图谱进行动态QTL鉴定。结果表明, 不同储藏时段龙稻5的发芽率均显著低于中优早8, 株系间耐储性存在较大差异; 不同储藏时段发芽率显著相关, 相邻存储时段发芽率关系紧密。共检测到17个耐储性相关的QTLs, 3个老化时段分别检测到5、4和3个, 检测到5个动态条件QTLs, 单一QTL解释5.60%-32.76%的表型变异, 加性效应在-16.78%-16.95%范围内。主效QTL簇qSSC2qSSC6qSSC7qSSC8能调控不同储藏时段的发芽率, qSSC6具有明显降低发芽率的效应。共检测到26对上位性互作位点, 主效QTL qSS1qSS4参与上位性互作, 这表明上位性互作是调控耐储藏性状的重要遗传组成。研究结果为水稻(Oryza sativa)耐储性相关QTL的精细定位奠定基础, 同时丰富了耐储性分子标记辅助选择育种的基因资源。  相似文献   
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Artificial solid‐electrolyte interphase (SEI) is one of the key approaches in addressing the low reversibility and dendritic growth problems of lithium metal anode, yet its current effect is still insufficient due to insufficient stability. Here, a new principle of “simultaneous high ionic conductivity and homogeneity” is proposed for stabilizing SEI and lithium metal anodes. Fabricated by a facile, environmentally friendly, and low‐cost lithium solid‐sulfur vapor reaction at elevated temperature, a designed lithium sulfide protective layer successfully maintains its protection function during cycling, which is confirmed by both simulations and experiments. Stable dendrite‐free cycling of lithium metal anode is realized even at a high areal capacity of 5 mAh cm?2, and prototype Li–Li4Ti5O12 cell with limited lithium also achieves 900 stable cycles. These findings give new insight into the ideal SEI composition and structure and provide new design strategies for stable lithium metal batteries.  相似文献   
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Quantum‐dot (QD) photovoltaics (PVs) offer promise as energy‐conversion devices; however, their open‐circuit‐voltage (VOC) deficit is excessively large. Previous work has identified factors related to the QD active layer that contribute to VOC loss, including sub‐bandgap trap states and polydispersity in QD films. This work focuses instead on layer interfaces, and reveals a critical source of VOC loss: electron leakage at the QD/hole‐transport layer (HTL) interface. Although large‐bandgap organic materials in HTL are potentially suited to minimizing leakage current, dipoles that form at an organic/metal interface impede control over optimal band alignments. To overcome the challenge, a bilayer HTL configuration, which consists of semiconducting alpha‐sexithiophene (α‐6T) and metallic poly(3,4‐ethylenedioxythiphene) polystyrene sulfonate (PEDOT:PSS), is introduced. The introduction of the PEDOT:PSS layer between α‐6T and Au electrode suppresses the formation of undesired interfacial dipoles and a Schottky barrier for holes, and the bilayer HTL provides a high electron barrier of 1.35 eV. Using bilayer HTLs enhances the VOC by 74 mV without compromising the JSC compared to conventional MoO3 control devices, leading to a best power conversion efficiency of 9.2% (>40% improvement relative to relevant controls). Wider applicability of the bilayer strategy is demonstrated by a similar structure based on shallow lowest‐unoccupied‐molecular‐orbital (LUMO) levels.  相似文献   
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