The erythropoietin receptor transmembrane domain mediates complex formation with viral anemic and polycythemic gp55 proteins

Erythropoietin receptor (EpoR) activation is crucial for mature red blood cell production. The murine EpoR can also be activated by the envelope protein of the polycythemic (P) spleen focus forming virus (SFFV), gp55-P. Due to differences in the TM sequence, gp55 of the anemic (A) strain SFFV, gp55-A, cannot efficiently activate the EpoR. Using antibody-mediated immunofluorescence co-patching, we show that the majority of EpoR forms hetero-oligomers at the cell surface with gp55-P and, surprisingly, with gp55-A. The EpoR TM domain is targeted by gp55-P and -A, as only chimeric receptors containing EpoR TM sequences oligomerized with gp55 proteins. Both gp55-P and gp55-A are homodimers on the cell surface, as shown by co-patching. However, when the homomeric interactions of the isolated TM domains were assayed by TOXCAT bacterial reporter system, only the TM sequence of gp55-P was dimerized. Thus, homo-oligomerization of gp55 proteins is insufficient for full EpoR activation, and a correct conformation of the dimer in the TM region is required. This is supported by the failure of gp55-A-->P, a mutant protein whose TM domain can homo-oligomerize, to fully activate EpoR. As unliganded EpoR forms TM-dependent but inactive homodimers, we propose that the EpoR can be activated to different extents by homodimeric gp55 proteins, depending on the conformation of the gp55 protein dimer in the TM region.     

Thin Film Co3O4/TiO2 Heterojunction Solar Cells

Co₃O₄ is investigated as a light absorber for all‐oxide thin‐film photovoltaic cells because of its nearly ideal optical bandgap of around 1.5 eV. Thin film TiO₂/Co₃O₄ heterojunctions are produced by spray pyrolysis of TiO₂ as a window layer, followed by pulsed laser deposition of Co₃O₄ as a light absorbing layer. The photovoltaic performance is investigated as a function of the Co₃O₄ deposition temperature and a direct correlation is found. The deposition temperature seems to affect both the crystallinity and the morphology of the absorber, which affects device performance. A maximum power of 22.7 μW cm^?2 is obtained at the highest deposition temperature (600 °C) with an open circuit photovoltage of 430 mV and a short circuit photocurrent density of 0.2 mA cm^?2. Performing deposition at 600 °C instead of room temperature improves power by an order of magnitude and reduces the tail states (Urbach edge energy). These phenomena can be explained by larger grains that grows at high temperature, as opposed to many nucleation events that occur at lower temperature.     

Functional Graded Germanium–Lead Chalcogenide‐Based Thermoelectric Module for Renewable Energy Applications

High thermoelectric conversion efficiencies can be achieved by making use of materials with, as high as possible, figure of merit, ZT, values. Moreover, even higher performance is possible with appropriate geometrical optimization including the use of functionally graded materials (FGM) technology. Here, an advanced n‐type functionally graded thermoelectric material based on a phase‐separated (PbSn_0.05Te)_0.92(PbS)_0.08 matrix is reported. For assessment of the thermoelectric potential of this material, combined with the previously reported p‐type Ge_0.87Pb_0.13Te showing a remarkable dimensionless figure of merit of 2.2, a finite‐element thermoelectric model is developed. The results predict, for the investigated thermoelectric couple, a very impressive thermoelectric efficiency of 14%, which is more than 20% higher than previously reported values for operating under cold and hot junction temperatures of 50 °C and 500 °C, respectively. Validation of the model prediction is done by a thermoelectric couple fabricated according to the model's geometrical optimization conditions, showing a good agreement to the theoretically calculated results, hence approaching a higher technology readiness level.