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In the present study, radiation doses and cancer risks resulting from abdominopelvic radiotherapy planning computed tomography (RP-CT) and abdominopelvic diagnostic CT (DG-CT) examinations are compared. Two groups of patients who underwent abdominopelvic CT scans with RP-CT (n = 50) and DG-CT (n = 50) voluntarily participated in this study. The two groups of patients had approximately similar demographic features including mass, height, body mass index, sex, and age. Radiation dose parameters included CTDIvol, dose–length product, scan length, effective tube current, and pitch factor, all taken from the CT scanner console. The ImPACT software was used to calculate the patient-specific radiation doses. The risks of cancer incidence and mortality were estimated based on the BEIR VII report of the US National Research Council. In the RP-CT group, the mean ± standard deviation of cancer incidence risk for all cancers, leukemia, and all solid cancers was 621.58 ± 214.76, 101.59 ± 27.15, and 516.60 ± 189.01 cancers per 100,000 individuals, respectively, for male patients. For female patients, the corresponding risks were 742.71 ± 292.35, 74.26 ± 20.26, and 667.03 ± 275.67 cancers per 100,000 individuals, respectively. In contrast, for DG-CT cancer incidence risks were 470.22 ± 170.07, 78.23 ± 18.22, and 390.25 ± 152.82 cancers per 100,000 individuals for male patients, while they were 638.65 ± 232.93, 62.14 ± 13.74, and 575.73 ± 221.21 cancers per 100,000 individuals for female patients. Cancer incidence and mortality risks were greater for RP-CT than for DG-CT scans. It is concluded that the various protocols of abdominopelvic CT scans, especially the RP-CT scans, should be optimized with respect to the radiation doses associated with these scans.
相似文献In this research work, a systematic design of a novel anti-reflective layer using embedded plasmonic nanoparticles is investigated for a thin-film GaAs solar cell. First, an anti-reflective layer that is made from ITO or SiO2 is assumed in which Al nanoparticles are embedded inside them to manipulate the absorption and hence the photocurrent of a 500-nm GaAs solar cell. It is investigated that the Al nanoparticles embedded inside the anti-reflective coating improve the photocurrent of a GaAs solar cell. For instance, the 15.37 mA photocurrent is obtained for 500-nm bare GaAs cell, and it reached to 17.25 mA/cm2 and 20.18 mA/cm2 when an ITO anti-reflection is used with Al nanoparticles on top and inside that, respectively. It increases to 21.94 mA/cm2 and 24.98 mA/cm2 in the case of the anti-reflective layer made from SiO2 and Al nanoparticles at the top side or inside that, respectively. Finally, using a double anti-reflective layer that is made from SiO2-TiO2, the maximum photocurrents of 23.79 mA/cm2 and 24.68 mA /cm2 are obtained when Al nanoparticles are at the top side or inside that, respectively. The simulation results show that the embedding Al nanoparticles in the anti-reflective layer can improve the photocurrent of a thin-film GaAs solar cell.
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